BF723,115 Allicdata Electronics

BF723,115 Discrete Semiconductor Products

Allicdata Part #:

1727-5414-2-ND

Manufacturer Part#:

BF723,115

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PNP 250V 0.1A SOT223
More Detail: Bipolar (BJT) Transistor PNP 250V 100mA 60MHz 1.2W...
DataSheet: BF723,115 datasheetBF723,115 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.09526
2000 +: $ 0.08732
5000 +: $ 0.08203
10000 +: $ 0.07673
25000 +: $ 0.07056
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 250V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 30mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
Power - Max: 1.2W
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: BF723
Description

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The BF723,115 is a high-performance, low-noise NPN planar epitaxial transistor that utilizes a junction gate field-effect structure with a self-aligned double-diffused MOS gate process.

This type of transistor is a single bipolar junction transistor (BJT) made with planar epitaxial technology. A BJT is constructed with a base, emitter, and collector to create a semiconductor junction between two conductive layers, allowing electricity to flow through it without mingling with other layers. The junction gate field-effect structure in a BF723,115 transistor combines a self-aligned junction and double-diffused MOS gate process.

The BF723,115 is ideal for applications that require low-noise, high-speed switching, like modems and high-speed data conversion. It is also used in RF communication and high-precision electronic devices such as medical instrumentation and remote measurement systems. This type of transistor offers superior switching speed and low-noise output.

The working principle of this type of transistor involves electrons passing through the base-collector junction, with the base consisting of p-type dopant and the collector consisting of n-type dopant. This creates a depletion region at the junction. The electrons that pass through this region are then attracted to the applied voltage, resulting in current flow.

The way electrons flow through the transistor depends on the applied voltage. When the applied voltage is positive, holes provide a conductive bridge between the base and collector, and electrons flow from collector to base. When the voltage is negative, electrons flow from base to collector. This current flow is known as the transistor’s gain and is used in many applications.

The BF723,115 is a highly reliable and versatile transistor designed for high-speed switching, making it a preferred choice for many applications. It offers superior switching speeds, low-noise output, and excellent gain. With its advanced design and low power consumption, it is ideal for a variety of applications, from modems and data conversion to medical instrumentation and remote measurement systems.

The specific data is subject to PDF, and the above content is for reference

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