BF723,115 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-5414-2-ND |
Manufacturer Part#: |
BF723,115 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PNP 250V 0.1A SOT223 |
More Detail: | Bipolar (BJT) Transistor PNP 250V 100mA 60MHz 1.2W... |
DataSheet: | BF723,115 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.09526 |
2000 +: | $ 0.08732 |
5000 +: | $ 0.08203 |
10000 +: | $ 0.07673 |
25000 +: | $ 0.07056 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 250V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 30mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 25mA, 20V |
Power - Max: | 1.2W |
Frequency - Transition: | 60MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | BF723 |
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The BF723,115 is a high-performance, low-noise NPN planar epitaxial transistor that utilizes a junction gate field-effect structure with a self-aligned double-diffused MOS gate process.
This type of transistor is a single bipolar junction transistor (BJT) made with planar epitaxial technology. A BJT is constructed with a base, emitter, and collector to create a semiconductor junction between two conductive layers, allowing electricity to flow through it without mingling with other layers. The junction gate field-effect structure in a BF723,115 transistor combines a self-aligned junction and double-diffused MOS gate process.
The BF723,115 is ideal for applications that require low-noise, high-speed switching, like modems and high-speed data conversion. It is also used in RF communication and high-precision electronic devices such as medical instrumentation and remote measurement systems. This type of transistor offers superior switching speed and low-noise output.
The working principle of this type of transistor involves electrons passing through the base-collector junction, with the base consisting of p-type dopant and the collector consisting of n-type dopant. This creates a depletion region at the junction. The electrons that pass through this region are then attracted to the applied voltage, resulting in current flow.
The way electrons flow through the transistor depends on the applied voltage. When the applied voltage is positive, holes provide a conductive bridge between the base and collector, and electrons flow from collector to base. When the voltage is negative, electrons flow from base to collector. This current flow is known as the transistor’s gain and is used in many applications.
The BF723,115 is a highly reliable and versatile transistor designed for high-speed switching, making it a preferred choice for many applications. It offers superior switching speeds, low-noise output, and excellent gain. With its advanced design and low power consumption, it is ideal for a variety of applications, from modems and data conversion to medical instrumentation and remote measurement systems.
The specific data is subject to PDF, and the above content is for reference
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