Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	1.3dB ~ 3dB @ 1GHz ~ 2GHz
Gain:	--
Power - Max:	380mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 15mA, 5V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-253-4, TO-253AA
Supplier Device Package:	SOT-143B
Base Part Number:	BFG67

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BFG67,235 Application Field and Working Principle

Introduction--- What is BFG67,235 Transistor?

BFG67,235 is a kind of silicon NPN double-diffused bipolar junction transistor (BJT) that is specially designed for use in radio frequencies (RF). It is one of the most popular transistors used in the electronics industry, due to its versatile range of applications and high level of performance. The BFG67,235 was developed by Motorola in the late 1970s and has been in production since then.

Characteristics and Features of the BFG67,235 Transistor

The BFG67,235 transistor is a high-performance small signal NPN bipolar junction transistor, specifically designed for use in RF applications. It features a low collector-to-emitter voltage (Vce), low operating current (Ib), high operating temperature (Tj), low profile, high input impedance, high power gain, and high gain bandwidth product. It also has a wide range of frequency coverage, with a frequency of up to 1 MHz. The device also has excellent thermal stability and an exceptionally low noise figure.

Application Areas for the BFG67,235 Transistor

Due to its versatile range of features, the BFG67,235 is suitable for a wide range of applications. It is mainly used in RF applications, such as amplifiers and oscillators in communication systems. It is also used in high-frequency switching circuits, where its high switching speed and good thermal stability make it a reliable choice. Additionally, it is popularly used in low-noise amplifiers, since it can provide a high level of performance and stability in such applications.

Working Principle of the BFG67,235 Transistor

The BFG67,235 transistor is a NPN bipolar junction transistor, which is composed of three regions, the base, the emitter, and the collector. The transistor works in a similar way to other BJTs, and is capable of amplifying signals. The transistor works by controlling the current flowing from the collector to the emitter. A small current is applied to the base terminal, which controls the current flow between the collector and the emitter. As the base current increases, the current flowing from the collector to the emitter increases, allowing the device to amplify the current.

Conclusion

The BFG67,235 is a high-performance silicon NPN bipolar junction transistor, designed for RF applications. It features a low collector-to-emitter voltage (Vce), low operating current (Ib), high operating temperature (Tj), low profile, high input impedance, high power gain, and wide frequency coverage. With its versatile range of features, the BFG67,235 is suitable for a wide range of applications, including amplifiers and oscillators in communication systems, high-frequency switching circuits, and low-noise amplifiers. The device works by controlling the current flowing from the collector to the emitter, and is capable of amplifying signals.

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