BFG67/X,215 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BFG67/X,215 is an NPN high-frequency transistor, which belongs to the Bipolar Junction Transistor (BJT) family. It is designed for applications such as radio frequency (RF) amplifying and switching, and has very high gain frequency characteristics over a large frequency range.

It has a low noise figure at frequencies ranging from 1 MHz to 30 GHz, and has a large current gain from 500 kHz to 10 GHz. The transistor has symmetrical characteristics over a wide frequency range, and is a low-power device.

The transistor has a high transconductance gain, and the small signal I/V characteristics are linear, with a low current level. The maximum power dissipation is 10 watts, and the minimum voltage at which the device can operate is 5V. It is also capable of providing 3A of output current.

The BFG67/X,215 transistors are available in two types - PN and PNX. The former is an ideal choice for general purpose applications, while the latter is suitable for more specific tasks. Both types feature a slightly higher gain and higher voltage rating, making them suitable for use in radio frequency amplifiers and switching applications.

The operation of a BFG67/X,215 transistor is relatively straightforward. The base of the transistor acts like a switch, and is used to allow current to flow from the collector to the emitter. The current from the collector is amplified, and the amplified current is then passed on to the emitter, which can then be used for a variety of applications, such as amplifying radio signals.

The output current of the transistor depends on the base-emitter voltage, which is controlled by a signal or by limiting resistance. The gain of the transistor is also determined by the base-emitter voltage, and can be adjusted with an adjustable resistor. The gain of the transistor is also affected by the collector-emitter capacitance, and the output current of the transistor is also affected by the collector-base capacitance. In addition, the collector-base capacitance also affects the input impedance of the transistor.

The BFG67/X,215 transistor is an efficient device for RF applications, and can be used in a wide range of applications. Its high gain frequency characteristics, low noise figure, and low power consumption make it an ideal choice for amplifying and switching applications, as well as general purpose applications.

The specific data is subject to PDF, and the above content is for reference