BFG92A/X,215

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BFG92A/X,215 application field and working principle

The BFG92A/X,215 is a high-power field-effect transistor designed for use in microwave communications, broadcast television and radar applications. It is a silicon, NPN, heterojunction transistor that is widely used in radio frequency (RF) circuits because it provides exceptional linearity and stability.The BFG92A/X,215 has a power rating of 1500 mW and performs best at a frequency range of 12.7-14.2 GHz. It also has an excellent noise figure, low gate current, low gate-source capacitance, and high gain.

Features and Benefits

• High gain,
• Low noise figure,
• Low gate current,
• Low gate-source capacitance.

Typical Applications

• Broadcast television
• Radar
• Communications

Working Principle of BFG92A/X,215

The BFG92A/X,215 is an N-channel Field Effect Transistor (FET) designed for high power applications in the 12.7-14.2GHz frequency range. The FET works in an amplifier configuration, with current passing through a gate-source channel. The channel creates an electric field, modulating the flow of current through the device. The output power is proportional to the voltage applied to the gate-source channel, and the gain is proportional to the ratio of the gate-source capacitance and the channel resistance. The high power-handling capability of the BFG92A/X,215 comes from its excellent linearity and stability, which is enabled by its heterojunction structure. This structure consists of a silicon substrate and an epi-layer that allows the high power output to be achieved without sacrificing the device’s performance. The epi-layer provides a high level of control and modulation of the electric field created by the gate-source channel.

Conclusion

The BFG92A/X,215 is an NPN heterojunction transistor which offers excellent linearity, stability and power output. It is ideal for use in high power applications in the 12.7-14.2GHz frequency range, such as broadcast television, radar and communications. The device’s heterojunction structure enables it to provide a high level of control and modulation of the electric field created by its gate-source channel, allowing for high levels of power output.

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