Allicdata Part #: | 568-8479-2-ND |
Manufacturer Part#: |
BFG93A,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 12V 35MA SOT143B |
More Detail: | RF Transistor NPN 12V 35mA 6GHz 300mW Surface Moun... |
DataSheet: | BFG93A,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 6GHz |
Noise Figure (dB Typ @ f): | 1.7dB ~ 2.3dB @ 1GHz ~ 2GHz |
Gain: | -- |
Power - Max: | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 30mA, 5V |
Current - Collector (Ic) (Max): | 35mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143B |
Base Part Number: | BFG93 |
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The BFG93A,215 is a type of transistor that falls under the category of transistors known as bipolar junction transistors or BJTs. They are distinguished by their structure, which consists of two PN junctions that are connected in either an NPN or PNP configuration. Additionally, this type of transistor can also be classified as an RF transistor as well because it is designed to be used in radio frequency applications. In this article, we will discuss the application field and working principle of the BFG93A,215.
Application Field
The BFG93A,215 is typically used in the radio frequency (RF) industry for a wide range of applications. In particular, it is often employed as an amplifier for radio wave signals, as well as for radio frequency switching and logic circuits. Additionally, it can also be used as a coupling device for oscillators, mixers, and RF detectors. As such, the BFG93A,215 is capable of providing a range of different functions in many different types of applications.
Working Principle
The working principle of the BFG93A,215 is based on a simple yet effective semiconductor device. Its main components consist of an emitter, a base, and a collector. When an external current is applied to the emitter, it will create electron-hole pairs, which are then driven by the base to the collector. This process generates a current between the collector and the emitter that is proportionate to the applied current, thus resulting in amplification, switching, or logic operation as desired.
In addition, the BFG93A,215 also has a number of different characteristics that must be taken into account when working with this type of transistor. For example, the current transition time between the collector and the emitter is typically short, thus enabling fast switching speeds and signal processing. Additionally, this type of transistor can handle high frequencies, making it well suited for use in RF applications. Finally, it has very low thermal resistance, allowing it to be used at a wide range of temperatures.
Conclusion
In conclusion, the BFG93A,215 is an RF transistor that is highly capable of providing a wide range of functions in different types of applications. Its simple yet effective working principle is enabled by its three main components, allowing it to create current that is then used for signal amplification, switching, or logic operation, as desired. Additionally, its unique characteristics make it well suited for use in high frequency applications, as well as in different temperatures. Overall, the BFG93A,215 is a versatile transistor that can easily be integrated into various types of systems.
The specific data is subject to PDF, and the above content is for reference
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