BFN18E6327HTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BFN18E6327HTSA1TR-ND |
Manufacturer Part#: |
BFN18E6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS NPN 300V 0.2A SOT-89 |
More Detail: | Bipolar (BJT) Transistor NPN 300V 200mA 70MHz 1W S... |
DataSheet: | BFN18E6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 30mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | 70MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | PG-SOT89 |
Base Part Number: | BFN18 |
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A BFN18E6327HTSA1 Transistor is a bipolar transistor. It is a single, three-terminal, two-aspect junction transistor which is made from a semiconductor material, commonly silicon. It contains two types of charge carriers, electrons and holes, and is used for transistor amplification and switching functions. The BFN18E6327HTSA1 is often used in applications where high current, low power and speed are required.
The structure of the BFN18E6327HTSA1 consists of a collector, base and emitter junction, where the collector and the emitter are the two main terminals, and the base is the control terminal. This main terminal combination is referred to as a BJT or bipolar junction transistor. A PNP or a NPN transistor can be used, depending upon the type of application.
The working principle of the BFN18E6327HTSA1 is based on the voltage drop across its junction. This voltage drop affects the current that flows through it, and it is the base-emitter voltage (VBE) that controls the current flow. If the voltage level goes above a certain level, the current flow increases and vice versa.
The BFN18E6327HTSA1 Transistor is used in different kinds of applications. It can be used for voltage amplification, switching, buffering, level-shifting and other functions. It is also used in power amplifier circuits where it is used to provide control of the output stage current. It can also be used as a high-frequency amplifier where its fast switching speed allows for an improved signal-to-noise ratio. Another application of the BFN18E6327HTSA1 is in motor control circuits, where the transistor is used to provide the current required to turn an electric motor on and off.
The BFN18E6327HTSA1 is also used in various types of communications equipment and sensors. In communications, it is used to amplify audio signals transmitted over long distances, and in sensors it is used to detect objects or materials in a variety of different applications.
The advantages of the BFN18E6327HTSA1 Transistor include its high current gain, its fast switching speed, its low power consumption and its low cost. It can also be used in a wide variety of applications, and its compact size allows for easy integration into circuit boards.
The BFN18E6327HTSA1 Transistor is a popular choice for many applications, due to its high current gain, fast switching speed and low power consumption. It is also a reliable and cost-effective solution, making it an ideal choice for those looking for a high-performance transistor.
The specific data is subject to PDF, and the above content is for reference
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