Allicdata Part #: | BFN18H6327XTSA1-ND |
Manufacturer Part#: |
BFN18H6327XTSA1 |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR AF SOT89-4 |
More Detail: | Bipolar (BJT) Transistor NPN 300V 200mA 70MHz 1.5W... |
DataSheet: | BFN18H6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.08756 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 30mA, 10V |
Power - Max: | 1.5W |
Frequency - Transition: | 70MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | PG-SOT89 |
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BFN18H6327XTSA1 is part of a broad range of semiconductor products from leading manufacturers of transistors. It is a type of bipolar junction transistor (BJT) that belongs in the family of single transistors. The BFN18H6327XTSA1 is known for its low-power, high-frequency performance and is used in many applications.
The BFN18H6327XTSA1 is a transistorized device which uses a single layer of semiconducting material, typically silicon, to form a three-terminal device. The transistor has three distinct regions: emitter, base and collector. Light electrical current in one region can be controlled by by applying a larger current in a second region, thus allowing the transistor to amplify, switch or alter its electrical output. This makes transistors useful for a variety of applications, including general-purpose amplifiers, rf amplifiers, and optical switching.
BFN18H6327XTSA1 transistors are most commonly found in amplifier circuits, radio frequency (RF) communication equipment, medical electronics, and automotive electronics. The transistors can also be used in other applications such as home theaters, calculators and computers. Some of the applications of the BFN18H6327XTSA1 transistor can include portable radio frequency (RF) communication equipment, oscillators, and computers.
The working principle of BFN18H6327XTSA1 assumes the transmission and reception of signals through the base emitter collector (BEC) configuration. When a voltage is applied to the base, it causes the flow of electrons through the base and into the emitter which produces a current. This current is then amplified when it passes through the collector and is used to create signals that are suitable for various applications.
The BFN18H6327XTSA1 transistors have been designed to ensure low power yet deliver high frequency performance. The transistor also has a high breakdown voltage which makes it ideal for applications that require a large voltage load and can offer long-term reliability. The high frequency performance allows for faster response times for real-time applications, and the low-power operation minimizes the power consumption and heat generation.
Overall, the BFN18H6327XTSA1 transistor is a high-performance single-stage transistor which offers a wide range of applications. It is known for its low power, high frequency performance, and is suitable for applications such as RF communication equipment, oscillators, computers and portable radio frequency communication equipment. The device has a high breakdown voltage and can be used for reliable operations for an extended period of time.
The specific data is subject to PDF, and the above content is for reference
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