Allicdata Part #: | 568-6200-2-ND |
Manufacturer Part#: |
BFQ540,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 12V 9GHZ SOT89 |
More Detail: | RF Transistor NPN 15V 120mA 9GHz 1.2W Surface Moun... |
DataSheet: | BFQ540,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 9GHz |
Noise Figure (dB Typ @ f): | 1.9dB ~ 2.4dB @ 900MHz |
Gain: | -- |
Power - Max: | 1.2W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 40mA, 8V |
Current - Collector (Ic) (Max): | 120mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | BFQ540 |
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BFQ540,115 transistors are used in a variety of electronic applications, ranging from low-power applications for communication to high-power RF applications. This type of transistor is most commonly used in RF (radio frequency) amplifier and oscillator circuits, as the extremely high frequency characteristics of the device enable it to amplify, create and shape signals with sharp edges and very low distortion. In this guide we will discuss the application field and working principle of the BFQ540,115 transistor in greater depth.
Application Field
The BFQ540,115 transistor is widely used in radio frequency (RF) applications such as amplifiers, oscillators and other circuits that require high frequency or wide bandwidth characteristics. This type of transistor is capable of operating up to frequencies of 8GHz and can handle input signals up to 60MHz. This makes the BFQ540,115 an excellent choice for RF communication applications such as cell phone reception, satellite receivers and wireless networking. In addition, the device is also suitable for use in RF amplifier and oscillator circuits, due to its low distortion characteristics and high frequency characteristics.
Working Principle
The BFQ540,115 is a bipolar junction transistor (BJT). BJT transistors operate by controlling the flow of current through their three terminals: the emitter, collector and base. The device functions by providing a controlled and amplified current path between the emitter and collector. During operation, the base terminal is connected to a voltage source, which causes current to flow between the emitter and collector terminals. The emitter-collector current is then amplified by the BJT and is used to control the current flow in the external circuit.
The device is designed to operate at frequencies up to 8GHz and is fabricated on gallium arsenide (GaAs) substrates in order to achieve these high frequencies. This type of transistor has several advantages over other types of transistors. Firstly, due to its high frequency characteristics, the device is capable of operating at frequencies much higher than those achievable by bipolar transistors, allowing for wider bandwidth and sharper edges in signals. In addition, the device is power efficient, meaning that it can operate using small amounts of current. This makes the BFQ540,115 an ideal choice for low power applications.
Conclusion
The BFQ540,115 bipolar junction transistor is widely used in RF applications such as amplifiers, oscillators and other circuits that require high frequency or wide bandwidth characteristics. The device is fabricated on gallium arsenide substrates and is capable of operating up to 8GHz and handling input signals up to 60MHz. The device is highly power efficient and provides excellent low distortion characteristics. With its versatile application field and working principle, the BFQ540,115 transistor is an excellent choice for many different types of RF applications.
The specific data is subject to PDF, and the above content is for reference
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