Allicdata Part #: | 568-6201-2-ND |
Manufacturer Part#: |
BFQ591,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 15V 7GHZ SOT89 |
More Detail: | RF Transistor NPN 15V 200mA 7GHz 2.25W Surface Mou... |
DataSheet: | BFQ591,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 7GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 2.25W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 70mA, 8V |
Current - Collector (Ic) (Max): | 200mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | BFQ591 |
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Transistors are essential components used in a variety of different applications ranging from low-power digital circuits to high-power transmission networks. They are widely used in both analog and digital applications, and can be found in virtually any kind of electronic system. In this article, we will discuss one particular type of transistor – the BFQ591,115 – and its application field and working principle.
The BFQ591,115 is a NPN bipolar junction transistor (BJT) designed for use in high-frequency radio-frequency (RF) applications. It is a high-frequency device with high gain and low power consumption. It is a very popular choice among radio-frequency engineers and is widely used in high-frequency electronic systems such as radio receiver and transmitter circuits, antenna array tuning and data transmission systems.
The working principle of the BFQ591,115 is relatively simple. As with other BJT transistors, it consists of three regions: emitter, base and collector. The emitter is the negative terminal of the transistor and the collector is the positive terminal. When the base terminal of the transistor is given a positive potential, the depletion region between the emitter and base regions increases, allowing current to flow between the emitter and collector. This is the action of the transistor, effectively amplifying or switching the input signal.
The BFQ591,115 has a very high frequency response and an exceptionally high gain for its small size. Its gain range is about 4 to 6dB and its frequency response is from 0.8MHz to 1GHz. The device is rated for a maximum collector-emitter voltage of 40 volts and a maximum collector-base voltage of 40 volts. It can handle a maximum junction temperature of 25 degrees Celsius with a maximum power dissipation rating of 4 watts. The transistor is also very rugged and can withstand severe environmental conditions.
The BFQ591,115 is most commonly used in applications that require high-frequency performance such as radio-frequency amplifiers, local oscillators and frequency multipliers. The device is also widely used in receivers, antennas and data transmission systems. In addition, the transistor has a wide application field in wireless communication systems, wireless networks and GPS receivers.
Overall, the BFQ591,115 is an excellent transistor for high-frequency radio-frequency applications. It has a high frequency response, an exceptionally high gain, a wide application field and a robust design that makes it suitable for many different types of components. The transistor is easy to use and has become a popular choice among radio-frequency engineers.
The specific data is subject to PDF, and the above content is for reference
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