BFS520,115 Discrete Semiconductor Products |
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Allicdata Part #: | 568-1654-2-ND |
Manufacturer Part#: |
BFS520,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 70MA 15V 9GHZ SOT323 |
More Detail: | RF Transistor NPN 15V 70mA 9GHz 300mW Surface Moun... |
DataSheet: | BFS520,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 9GHz |
Noise Figure (dB Typ @ f): | 1.1dB ~ 2.1dB @ 900MHz |
Gain: | -- |
Power - Max: | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 20mA, 6V |
Current - Collector (Ic) (Max): | 70mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Base Part Number: | BFS520 |
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RF transistors are widely used in a variety of applications and have become an important component for electronic circuits. Among them, the BFS520,115 device is the latest and most sophisticated one. The purpose of this document is to describe the application field, the working principle and other related information to the BFS520,115.
The BFS520,115 is a bipolar transistor that is mainly used in the radio frequencies (RF) range. It is designed for amplifying, switching and oscillating applications such as high frequency amplifiers, local oscillators and switched power amplifiers. It use the pnp structure which behaves as a negative element in electrical circuits. This bipolar transistor has an extremely low noise figure and excellent linearity, meaning that it can provide a good signal-to-noise ratio. This feature makes this device ideal for low-noise amplifiers, and is useful for applications as receivers and low noise amplifiers.
The BFS520,115 has four transistors consisting Narrow Base and High-Current Collector Transistors, Wide Base and Low-Current Transistor, and two wide Emitter Transistors. All of these transistors work together to achieve the desired performance. The Wide Base and Low-Current Transistor allow the device to minimize the base resistance to reduce inefficiencies. The Narrow Base and High-Current Collector Transistors help to boost high current power output.
The working principle of the BFS520,115 is quite simple. First, the signal from the signal source is input to the base of the Narrow Base and High-Current Collector Transistor. This transistor works in conjunction with the Wide Base and Low-Current Transistor to provide the necessary current gain. The current gain is then used to drive the two wide Emitter Transistors which produce a voltage output. The voltage output is then amplified and used as the signal output.
The working principle of the BFS520,115 shows the importance of transistors in the world of electronics. As technology advances, transistors are becoming increasingly more important. This is due to their capability to amplify and switch signals with very low power consumption and noise. Additionally, transistors also allow for greater circuit complexity and increased functionality.
In conclusion, the BFS520,115 is a high quality bipolar transistor that is used in a variety of RF applications. Its low noise figure, excellent linearity and ability to handle high currents make it the perfect choice for amplifying, switching, and oscillating applications. This transistor is evolving as technology advances, leading to even more applications and benefits.
The specific data is subject to PDF, and the above content is for reference
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