BFS540,115 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	9GHz
Noise Figure (dB Typ @ f):	1.3dB ~ 1.7dB @ 9MHz
Gain:	--
Power - Max:	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 40mA, 8V
Current - Collector (Ic) (Max):	120mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323-3

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BFS540,115 Application Field and Working Principle

Introduction

BFS540,115 is a kind of NPN silicon-based bipolar transistor (BJT), designed for radio-frequency applications including low-noise amplifier stages and signal switching. It can operate in temperature ranges from -55 to +150 degrees Celsius. This device has both leads and tabs that are quite easy to use. Additionally, its low-cost production makes it an economic yet dependable choice for many applications.

Application Fields

BFS540,115 transistors are suitable for many low-power amplifier and signal switching applications in radio frequency ranges. These devices feature a high breakdown voltage, low on-state voltage, and a low noise figure, which makes it ideal for applications such as navigation, communication systems, and antennas. Also, the device is used in specific applications such as low noise amplifier stages (LNAs), low noise amplifier (LNA) control circuits, and signal switches for radio and communication systems.

Working Principle

BFS540,115 transistors use negative-feedback gain to operate in radio frequencies. This allows it to suppress stress and noise as the device operates. Furthermore, it eliminates the possibility of oscillations that otherwise occur in certain applications such as amplifier stages, switches, and control circuits. This device uses a collectors-emitter junction which is biased negatively to create a region of high current flow. This current can be adjusted and regulated by varying the base-emitter bias voltage level.BFS540,115 transistors also feature a high-frequency cut-off rate (fc) due to its high input impedance. This feature allows the device to suppress frequencies above a desired point thus allowing the necessary signal to pass and enhance performance. As a result, BFS540,115 transistors can handle large signals without distortion and noise.

Conclusion

BFS540,115 transistors are an economical yet effective choice for many radio-frequency applications. It is suitable for low-cost, low-power amplifier and signal switching designs, which makes it an ideal choice for a broad range of applications. Furthermore, its high frequency cut-off rate and low on-state voltage and breakdown voltage allow designers to bring their designs up and running.

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