
BFT46,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-8482-2-ND |
Manufacturer Part#: |
BFT46,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | JFET N-CH 10MA 250MW SOT23 |
More Detail: | JFET N-Channel 10mA 250mW Surface Mount SOT-23 (T... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Drain to Source Voltage (Vdss): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 200µA @ 10V |
Current Drain (Id) - Max: | 10mA |
Voltage - Cutoff (VGS off) @ Id: | 1.2V @ 0.5nA |
Input Capacitance (Ciss) (Max) @ Vds: | 5pF @ 10V |
Power - Max: | 250mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 (TO-236AB) |
Base Part Number: | BFT46 |
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Transistors - JFETs
The BFT46,215 is a type of JFET (Junction Field Effect Transistor) commonly used for switching and amplifier applications. This type of transistor is a voltage-controlled device with three terminals. The BFT46,215 is a n-channel enhancement device, which means it acts as a closed switch when its gate voltage is higher than the source voltage.
Application Fields
The JFET can be used in a wide range of applications due to its wide range of features and low cost. Common application fields that use BFT46,215 transistors include audio amplifiers, logic circuits, control circuit, low frequency noise suppression, and high frequency amplifiers. These transistors are ideal for use in applications where low pinch-off voltage and low noise is required, due to its high voltage gate-source breakdown voltage and extremely low gate current.
Working Principle
The working principle of the BFT46,215 JFET lies in its application of an electric field that affects the flow of current. When a voltage is applied between the gate and source, the electric field it creates induces a depletion region around the source terminal. This causes a decrease in the current that can flow between the source and drain. The size of this depletion region is dependent on the gate bias voltage. When the gate bias voltage is raised, the depletion region increases, which reduces the current flow between the source and drain. Conversely, when the gate bias voltage is reduced, the depletion region decreases and the current flow increases.
The amount of current passing between the source and drain terminals is determined by the amount of voltage applied between the gate and source terminals. Pinch-off is the point when the current passing between the source and drain terminals reaches zero. This state can be programmed by varying the gate bias voltage, allowing the user to determine the amount of current that will flow between the two terminals.
The BFT46,215 JFETs are designed to offer high-performance operation in low-noise and high-frequency applications. They offer an extremely low-noise distortion and low gate current, making them ideal for use in audio amplifier applications. Additionally, their high-voltage breakdown and maximum source-drain resistance makes them suitable for use in low-frequency noise suppression and control circuits.
Conclusion
The BFT46,215 is a commonly used JFET transistor for amplification and switching applications. It is capable of providing low-noise operation in high-frequency audio amplifier applications, as well as low-frequency noise suppression and control circuits. Its gate bias voltage can be varied to change the pinch-off point, allowing users to determine the amount of current that will flow through the transistor.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BFT46,215 | NXP USA Inc | 0.0 $ | 1000 | JFET N-CH 10MA 250MW SOT2... |
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