BFU610F,115 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	5.5V
Frequency - Transition:	15GHz
Noise Figure (dB Typ @ f):	0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz
Gain:	13.5dB ~ 23.5dB
Power - Max:	136mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	90 @ 1mA, 2V
Current - Collector (Ic) (Max):	10mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-343F
Supplier Device Package:	4-DFP
Base Part Number:	BFU610

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RF transistors are devices capable of amplifying or switching a signal at very high frequency. The use of such transistors can result in significantly better performance, such as improved noise immunity, better linearity, and higher power efficiency. One such RF transistor is the BFU610F,115, which features an excellent intrinsic gain and flat characteristic, making it suitable for many applications.

Application Field of BFU610F,115

The BFU610F,115 is a high-frequency bipolar transistor used extensively in RF applications such as cellular phones, embedded antennas and satellite communications. Its high-gain performance and low noise characteristics make it particularly suitable for applications like RF amplifiers, mixers, converters and RF switches.

Working Principle of BFU610F,115

The BFU610F,115 is a NPN silicon bipolar junction transistor (BJT). Like all BJTs, it has three layers of semiconductor material, an emitter, a base and a collector. The current flow between the emitter and the collector is controlled by a voltage applied to the base. The collector-to-emitter current gain (hFE) and the power gain of the device (power added gain) depend on the hFE of the transistor and the operating frequency.When the base-emitter junction is forward biased, a majority of electrons in the emitter region diffuse into the base region, and some of these electrons are then swept across the collector-base junction and into the collector, creating amplified current. This amplified current is proportional to the current injection into the base, and can be used to generate an amplified signal.The high-frequency characteristics of the BFU610F,115 are determined by the parasitic capacitance between the collector and base and between the emitter and base. In order to maximize the performance of the device, these capacitances should be minimized.

Conclusion

The BFU610F,115 is an excellent choice for many high-frequency applications, such as RF amplifiers, mixers, converters and RF switches, due to its excellent intrinsic gain and flat characteristic. The current flow between the emitter and collector is controlled by a voltage applied to the base, and the high-frequency characteristics of the device are determined by the parasitic capacitance between its terminals.

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