BFU630F,115 Allicdata Electronics

BFU630F,115 Discrete Semiconductor Products

Allicdata Part #:

568-8453-2-ND

Manufacturer Part#:

BFU630F,115

Price: $ 0.15
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANSISTOR NPN SOT343F
More Detail: RF Transistor NPN 5.5V 30mA 21GHz 200mW Surface Mo...
DataSheet: BFU630F,115 datasheetBFU630F,115 Datasheet/PDF
Quantity: 9000
3000 +: $ 0.13196
6000 +: $ 0.12345
15000 +: $ 0.11493
Stock 9000Can Ship Immediately
$ 0.15
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: 21GHz
Noise Figure (dB Typ @ f): 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
Gain: 13dB ~ 22.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 2V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: 4-DFP
Base Part Number: BFU630
Description

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The BFU630F is a type of transistor specifically designed for use in radio-frequency applications; such as radio signal amplification and signal switching. These components are commonly referred to as a Bipolar Junction Transistor (BJT) due to their three-terminal configuration and use of a single pn junction as the active part of the device.

The BFU630F is a NPN type device, meaning the majority carriers are negative electrons. This means that the number of electrons is greater than the number of positively charged holes, or acceptor sites, in the active region of the transistor. The active region is also known as the base, while the other two terminals, the collector and emitter, make up the other two terminals of the component. As a part of the operation of the component, charge carriers can move between the collector, base and emitter and through this process an amplified signal can be generated.

The BFU630F has a maximum rated collector-emitter voltage of 1,500 volts and a maximum collector-base voltage of 2,500 volts. The component has abandwidth of up to 12 MHz, and its noise figure is 1.5 dB. The BFU630F is rated for a maximum power dissipation of 150 mW and has a relatively high current gain figure, providing up to 70 at a collector current of 5 mA.

When the component is being used as an amplifier, the input signal is first sent to the base terminal of the component. This input signal causes a variation in the voltage at the base, which in turn changes the amount of current available at the emitter. As the signal applied to the base changes, so too does the base-emitter voltage, and the amount of current flowing through the device is increased or decreased depending on the voltage present. The change in current flow through the component is subsequently amplified and sent out of the emitter terminal as the output signal.

As well as being used as an amplifier, the BFU630F can also be used as a switch. When the BFU630F is used as a switch, the input signal is sent to the base terminal of the component and causes a variation in the voltage at the base, or at the base-emitter junction. This in turn causes conduction to occur between the collector and emitter terminals, allowing current to flow through the device. When the input signal is removed, the conduction ceases, and the switch is no longer conducting. By varying the input signal to the component, the BFU630F can be used for switching operations.

The BFU630F is a versatile component that can be used for a range of different applications requiring high-frequency radio-frequency operation. Its high current gain and low noise figure makes it a great choice for applications where power efficiency and signal transmission are of paramount importance. Additionally, its ability to function as both an amplifier and switch make it very versatile and suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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