BGA3012,115 RF/IF and RFID |
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Allicdata Part #: | 568-10188-2-ND |
Manufacturer Part#: |
BGA3012,115 |
Price: | $ 0.61 |
Product Category: | RF/IF and RFID |
Manufacturer: | NXP USA Inc |
Short Description: | IC MMIC AMP HI EFF 1.2V SOT89 |
More Detail: | RF Amplifier IC CATV 5MHz ~ 1GHz SOT-89-3 |
DataSheet: | BGA3012,115 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.55267 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Frequency: | 5MHz ~ 1GHz |
P1dB: | 18dBm |
Gain: | 12dB |
Noise Figure: | 3.2dB |
RF Type: | CATV |
Voltage - Supply: | 5 V ~ 8 V |
Current - Supply: | 70mA |
Test Frequency: | 1GHz |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RF amplifiers are essential components in any communication or electronic system. They are devices that allow for the efficient transmission of signals across large distances without the need for costly or time consuming wired solutions.
The BGA3012115 is an RF amplifier specifically designed for use in high power applications. It is rated for an operating frequency range of 5MHz to 2GHz and an output power of up to 25dBm. It features a high linearity and wide dynamic range, allowing it to amplify even the most complex and wide frequencies. The device also has a low noise figure of 1.25dB, ensuring excellent signal clarity and low noise when in use.
In terms of physical properties, the BGA3012115 is a compact device measuring just 46 x 39mm in size. This makes it suitable for use in tight spaces, such as in embedded or portable systems. It also has an operating temperature range of -45C to +85C and can operate for up to 20 years without degradation. This makes it an excellent long term solution for applications in challenging conditions.
The core technology employed in the BGA3012115 is a GaAs pHEMT process. This process utilizes high-electron-mobility transistors (HEMTs) which are able to deliver very high power gain and superior linearity. This technology allows the amplifier to achieve the efficient transmission of signals across large distances with low distortion and low noise. Furthermore, this Gallium Arsenide substrate is also very reliable and durable, ensuring that the amplifier can provide years of reliable performance.
In terms of application fields, the BGA3012115 can be used in a variety of communication, radar and audio applications. It is perfect for use in cellular phone base stations, Wi-Fi hotspot systems, wireless data links, satellite communications systems, and radar systems. Furthermore, it is also suitable for use in professional audio systems, where it can provide high fidelity audio reproduction.
In terms of working principle, the BGA3012115 is a two stage amplifier which makes use of an input stage followed by a gain stage. The input stage is responsible for providing a low noise linear signal which is then amplified by the gain stage. This allows the BGA3012115 to provide a wide range of gain levels with low distortion. The device also offers a gain control which allows the user to adjust the output level of the amplifier, allowing for the optimization of system performance in different applications.
To conclude, the BGA3012115 is a highly capable RF amplifier designed for use in a variety of applications. Its high linearity and wide dynamic range make it suitable for use in communication, radar and audio applications. Furthermore, its GaAs substrate ensures reliable and durable performance, providing an excellent long term solution.
The specific data is subject to PDF, and the above content is for reference
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