| Allicdata Part #: | 568-2424-ND |
| Manufacturer Part#: |
BLL1214-250,112 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Ampleon USA Inc. |
| Short Description: | RF FET LDMOS 75V 12DB SOT502A |
| More Detail: | RF Mosfet LDMOS 36V 150mA 1.2GHz ~ 1.4GHz 12dB 250... |
| DataSheet: |  BLL1214-250,112 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS |
| Frequency: | 1.2GHz ~ 1.4GHz |
| Gain: | 12dB |
| Voltage - Test: | 36V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 150mA |
| Power - Output: | 250W |
| Voltage - Rated: | 75V |
| Package / Case: | SOT-502A |
| Supplier Device Package: | LDMOST |
Description
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Introduction
BLL1214-250,112 is a type of Field Effect Transistor (FET) used in a wide range of applications from switching to RF (Radio Frequency) circuits. It is also known as an RF MOSFET, and is typically used for purposes such as radio wave modulation, amplifiers, antenna matching, and high power switching.Characteristics of BLL1214-250,112
The BLL1214-250,112 RF MOSFET is a planar type FET that usually comes in the SOT-223 package. It has four pins, including the source, gate and drain, with a maximum drain-source voltage (Vds) of 250V and a maximum drain current (Id) of 112A. It is well-suited for use in high voltage switching applications due to its high maximum drain-source voltage. It also has a low total gate charge (Qg) and a low output capacitance (Coss). Its drain-source on-resistance (Rds(on)) is generally very low, typically between 5 and 20 milliohms. Additionally, its breakdown voltage is usually very high, usually between 700 and 900 volts.Applications of BLL1214-250,112
The BLL1214-250,112 RF MOSFET is used in a variety of applications in RF (Radio Frequency) circuits, including antenna matching, amplifiers, modulators, and high power switching. Due to its wide range of operating characteristics, it can be used in many types of RF circuits ranging from low to high power.Working Principle
The BLL1214-250,112 RF MOSFET works by controlling the flow of electrical current through a region of semiconductor material between the drain and source terminals, using a gate voltage. When the gate voltage is applied, it causes a thin layer of electron-rich silicon dioxide to form between the drain and source terminals, creating an electrical barrier that alters the flow of current. In this way, the MOSFET acts as a variable resistor. When the gate voltage is increased, the electrical barrier becomes thicker, reducing the flow of current through the drain-source region. Conversely, when the gate voltage is reduced, the electrical barrier becomes thinner, allowing for greater current flow. This variable resistance enables the MOSFET to be used in RF applications, allowing for more precise control over the signal.Conclusion
The BLL1214-250,112 RF MOSFET is one of the most widely used FETs in RF applications. By controlling the flow of current through the drain and source terminals, this MOSFET is able to achieve precision control over the signal, and can be used in applications such as antenna matching, amplifiers, and high power switching.The specific data is subject to PDF, and the above content is for reference
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