Allicdata Part #: | BLS3135-10,114-ND |
Manufacturer Part#: |
BLS3135-10,114 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANSISTOR RF POWER SOT445C |
More Detail: | RF Transistor NPN 75V 1.5A 3.5GHz 34W Surface Moun... |
DataSheet: | BLS3135-10,114 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 75V |
Frequency - Transition: | 3.5GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 9dB |
Power - Max: | 34W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 250mA, 5V |
Current - Collector (Ic) (Max): | 1.5A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-445C |
Supplier Device Package: | CDFM2 |
Base Part Number: | BLS3135 |
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The BLS3135-10,114 is a bipolar transistor which belongs to the RF category. It is a three-layer device which features low frequency and good linearity performance. This type of transistor is used for radio frequency applications, such as radio transmitters and receivers, small signal linear amplifiers, and low noise amplifiers.This device is made up of two pieces of semiconductor material which form the base and emitter. The third layer is referred to as the collector and is normally made of a metal layer. The base and the emitter are connected together with the collector forming the completed transistor.When current is put into the emitter of the BLS3135-10,114, it creates a hole in the base material. This hole allows electrons to travel from the emitter to the collector. This action creates a flow of current, known as the "collector current." This current can be amplified by changing the size of the hole in the base material, which is done by varying the voltage on the base. The BLS3135-10,114 is usually powered by a DC voltage, but it is possible to use an AC voltage as well, which is known as Class C operation. In this configuration, the transistor acts as a switch, where the voltage on the base determines whether the transistor is on or off.The main advantages of using a bipolar transistor are its low cost and low power consumption. It also has a high frequency response and can be used for frequencies up to 10 GHz, making it suitable for applications such as short-range and high-frequency communications.The main downside of the BLS3135-10,114 is that it has a relatively narrow frequency range, which limits its use in some applications. It also has a relatively high noise figure, which makes it unsuitable for applications where noise is an issue. Additionally, it has the potential to produce unwanted oscillations, which can interfere with the signal.Overall, the BLS3135-10,114 is a great choice for applications where low cost and low power consumption are important. It provides good linearity performance and can be used for short-range, high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLS3135-10,114 | NXP USA Inc | 0.0 $ | 1000 | TRANSISTOR RF POWER SOT44... |
BLS3135-20,114 | NXP USA Inc | 0.0 $ | 1000 | TRANSISTOR RF POWER SOT42... |
BLS3135-50,114 | NXP USA Inc | 0.0 $ | 1000 | TRANSISTOR RF POWER SOT42... |
BLS3135-65,114 | NXP USA Inc | 0.0 $ | 1000 | TRANSISTOR RF POWER SOT42... |
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