Allicdata Part #: | BLS3135-20,114-ND |
Manufacturer Part#: |
BLS3135-20,114 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANSISTOR RF POWER SOT422A |
More Detail: | RF Transistor NPN 75V 2A 3.5GHz 80W Surface Mount ... |
DataSheet: | BLS3135-20,114 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 75V |
Frequency - Transition: | 3.5GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 8dB |
Power - Max: | 80W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 1.5A, 5V |
Current - Collector (Ic) (Max): | 2A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-422A |
Supplier Device Package: | CDFM2 |
Base Part Number: | BLS3135 |
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BLS3135-20,114 transistors, also known as “bipolar junction transistors” (BJT), are a type of RF transistor that are used in a variety of applications. The BLS3135-20,114 transistors are designed for use in high frequency applications, such as in radio communication, wireless data transmission, and radio frequency amplifier circuits.
A BLS3135-20,114 transistor is composed of three terminals: the collector, base, and emitter. The collector is the terminal that collects the electrons that flow in the transistor circuit. The base is the terminal which is used to control the flow of electrons in the transistor circuit. The emitter is the terminal that emits electrons in the transistor circuit.
The collector-base junction of a BLS3135-20,114 transistor works in such a way that the collector current can be varied by the base current. The electrons emitted from the collector are attracted to the base, which causes the collector current to increase. This results in an output current that can be controlled by varying the base current. This means that the BLS3135-20,114 transistors can be used to create amplifiers, oscillators, and other active circuits that require a controlled output current.
The BLS3135-20,114 transistors are also designed for use in high frequency applications due to their low frequency response. This means that the transistor is able to respond quickly to changes in input voltage, which allows for better control at high frequencies. This makes the BLS3135-20,114 transistors suitable for use in RF applications, such as cellular phones and wireless data transmission.
The BLS3135-20,114 transistors can also be used in other applications, such as switching, audio amplifiers, and voltage regulators. The switching applications require a transistor that is able to quickly switch between the on and off states. The audio amplifiers require transistors that can produce a high output power with low distortion. The voltage regulators require high gain transistors that can maintain a constant output voltage.
In conclusion, BLS3135-20,114 transistors are RF transistors that are designed for use in high frequency applications. They are composed of three terminals: the collector, base, and emitter. They have a low frequency response, which makes them suitable for use in RF applications. They can be used for switching, audio amplifiers, and voltage regulators, as well as for other applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLS3135-10,114 | NXP USA Inc | 0.0 $ | 1000 | TRANSISTOR RF POWER SOT44... |
BLS3135-20,114 | NXP USA Inc | 0.0 $ | 1000 | TRANSISTOR RF POWER SOT42... |
BLS3135-50,114 | NXP USA Inc | 0.0 $ | 1000 | TRANSISTOR RF POWER SOT42... |
BLS3135-65,114 | NXP USA Inc | 0.0 $ | 1000 | TRANSISTOR RF POWER SOT42... |
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