BLT80,115

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BLT80,115 is a rare NPN-type transistor used in the radio-frequency (RF) range. It is a medium-power device and is highly suitable for high frequency applications. It is primarily used in high power microwave amplifiers, and due to its unique design, is capable of operating within a wide frequency range, making it one of the most widely used transistor types in RF.

The BLT80,115 is an NPN-type bipolar junction transistor that consists of a single emitter, base, and collector. The emitter is the source of charge, and is responsible for providing electrons that will be injected into the base junction. The electrons are injected into the base junction by a reverse-biased voltage, which creates two layers, or "zones" of charge around the junction. This is what gives the transistor its gain, or amplification factor.

The collector is responsible for providing the electrons back to the emitter, and for returning the electrons back to their original state. The collector is used in the base-emitter voltage circuit and is coupled to the base junction to create an amplification effect. The base-emitter voltage is essential for controlling the amount of current that is allowed to pass through the transistor.

The BLT80,115 is designed to operate within a wide frequency range. This range is typically between 1GHz and 10GHz, with a power capability of up to 800 Watts. Due to its use as a high-power device, the BLT80,115 must be properly cooled in order to prevent over-heating. This is why it is often housed in a metal shielded enclosure.

The BLT80,115 is a versatile transistor that is used in many RF applications where high frequency and power capabilities are key factors. It can be used in radio frequency amplifiers, power amplifiers, and even optical communication systems. It can also be used to create antennas and antennas for radar systems, as well as for remote sensing applications.

Due to its ability to operate at a high frequency and its high power capabilities, the BLT80,115 is often found in professional medical imaging applications, such as magnetic resonance imaging (MRI). It can also be found in satellite communication systems, air-traffic control systems, and broadcasting. Its unique design allows it to work within a wide range of frequencies, giving it a wide range of applications.

In conclusion, the BLT80,115 is a highly effective RF bipolar junction transistor that is suitable for many high-power application areas. Its wide frequency range makes it an ideal choice for a variety of RF applications, and its high power capabilities make it an excellent choice for medical imaging, satellite communication, and broadcasting applications. The transistor is capable of operating within a wide frequency range without the need for cooling, making it an extremely cost-effective solution.

The specific data is subject to PDF, and the above content is for reference