Allicdata Part #: | 568-6214-2-ND |
Manufacturer Part#: |
BLT81,115 |
Price: | $ 0.83 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 9.5V 500MA SOT223 |
More Detail: | RF Transistor NPN 9.5V 500mA 900MHz 2W Surface Mou... |
DataSheet: | BLT81,115 Datasheet/PDF |
Quantity: | 12000 |
1000 +: | $ 0.75363 |
2000 +: | $ 0.70167 |
5000 +: | $ 0.69127 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 9.5V |
Frequency - Transition: | 900MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 8dB |
Power - Max: | 2W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 300mA, 5V |
Current - Collector (Ic) (Max): | 500mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | BLT81 |
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.A BLT81,115 is a silicon bipolar transistor chip designed for RF (Radio Frequency) operations. It is a high power device which can be used for various applications such as amplifying or switching, and provides a low noise function with an optimal gain. This type of transistor is usually used in power electronic designs.
In terms of its application fields, the BLT81,115 works well for a wide range of power components including RF amplifiers and oscillators. The transistor has a maximum gain of 25 for high frequency applications and up to 40dB for low frequency applications. It can be used in a variety of oscillators and filters and can be used to control radio-frequency subsystems in a variety of frequencies.
The high power efficiency of the BLT81,115 enables it to be used as a switch or amplifier in many RF applications. As a switch, the transistor can be used in either switching or phase-shift oscillators, such as phase-shift keying (PSK). As an amplifier, the transistor can be used in high frequency communication systems such as cell phone systems, short wave receivers and high-definition audio systems.
In addition to its application fields, the working principle of the BLT81,115 transistor is based on the use of a small-signal NPN (Negative-Positive-Negative) circuit or a PNP (Positive-Negative-Positive) circuit. The main purpose of this transistor is to amplify the input signal to produce a high voltage output. The amplifier uses a small signal to change the current flowing through the transistor to vary the voltage across the collector and emitter junctions. This produces an amplified output which can be used for various RF applications.
The BLT81,115 has a low noise factor, which makes it suitable for a variety of applications. The transistor has both high stability and high efficiency, making it a popular choice for RF applications. The BLT81,115 is also suitable for high frequency and low power applications, making it an ideal component for a wide range of applications.
In conclusion, the BLT81,115 transistor is a versatile device which can be used in a variety of RF applications. It has a high power efficiency, a low noise factor and a high stability. The BLT81,115 is suitable for a variety of applications in the power and communication electronics markets. The transistor is a popular choice for amplifying and switching applications. Its working principle is based on the use of small-signal NPN and PNP circuits, and it can be used to control radio-frequency subsystems in a wide range of frequencies.
The specific data is subject to PDF, and the above content is for reference
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