BR100/03,113 Discrete Semiconductor Products |
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| Allicdata Part #: | 568-1767-2-ND |
| Manufacturer Part#: |
BR100/03,113 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | DIAC 28-36V 2A ALF2 |
| More Detail: | Diac/Sidac Thyristor 28 ~ 36V 2A ALF2 |
| DataSheet: | BR100/03,113 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Voltage - Breakover: | 28 ~ 36V |
| Current - Breakover: | 50µA |
| Current - Peak Output: | 2A |
| Operating Temperature: | 100°C (TJ) |
| Package / Case: | DO-204AH, DO-35, Axial |
| Supplier Device Package: | ALF2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Thyristors - DIACs, SIDACs, can be classified as one type of semiconductor devices. DIACs stands for "directly acting solid state current switch", SIDAC stands for "sidestepping bidirectional solid state switch". DIACs and SIDACs are two families of these devices and both share the same basic properties and characteristics. These types of devices are used for reliably switching on and off current, acting as a "solid-state switch" under the control of an external signal.
The BR100/03,113 application field and working principle is one example of these two types of devices. This is a two-terminal semiconductor device that is widely used in medium- to high-voltage applications. The device is constructed on a silicon substrate and consists of two small gap diodes connected in series. These diodes have a low forward voltage drop and very low reverse recovery time. The device can handle high current and voltage conditions, making it suitable for both high-power and high-speed applications.
The working principle of the BR100/03,113 is that when an external signal is applied to the control terminal, it will cause the two diodes to be activated simultaneously. This results in a relatively large voltage drop across the two diodes and hence, the switch becomes "on". When the signal is removed, the opposite will happen, the switch will be "off". In this way, the device can be used to switch on and off high currents reliably and quickly.
In addition to its high performance, the BR100/03,113 has several other advantages, such as cost-effectiveness and low maintenance. Since the device is manufactured using silicon substrate, production cost is relatively low compared to other types of thyristors. Moreover, the device is extremely reliable and requires very little maintenance. Furthermore, it offers superior performance in high-voltage and transient applications, making it an ideal choice for those applications.
Overall, the BR100/03,113 is a reliable, cost-effective, and high-performance device. It has the ability to reliably switch on and off high current and voltage conditions and offers superior performance in high-voltage and transient applications. As such, it is an excellent choice for medium to high voltage applications.
The specific data is subject to PDF, and the above content is for reference
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BR100/03,113 Datasheet/PDF