BR24G01FVM-3AGTTR Allicdata Electronics
Allicdata Part #:

BR24G01FVM-3AGTTR-ND

Manufacturer Part#:

BR24G01FVM-3AGTTR

Price: $ 0.15
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 1K I2C 1MHZ 8MSOP
More Detail: EEPROM Memory IC 1Kb (128 x 8) I²C 1MHz 8-MSOP
DataSheet: BR24G01FVM-3AGTTR datasheetBR24G01FVM-3AGTTR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.13412
6000 +: $ 0.12710
15000 +: $ 0.12489
30000 +: $ 0.12193
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: 8-MSOP
Base Part Number: BR24G01
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BR24G01FVM-3AGTTR is a type of semiconductor memory, which is a form of computer data storage that has dynamic random access memory. It is a type of non-volatile memory, which is a type of memory that can be electrically programmed and erased and does not require power for data retention. An integrated circuit embodying such a memory is known as an electrically erasable, programmable read-only memory (EEPROM).

This type of memory is based on a floating-gate transistor, which is a type of field-effect transistor that is used for storing information. The transistor has a conducting channel that is connected to a capacitive gate electrode. The gate electrode is separated from the conducting channel by an insulating layer, which acts as an electrical barrier to electrons. The gate electrode can be charged or discharged, allowing information to be stored or erased.

The BR24G01FVM-3AGTTR has a variety of applications, such as aviation, medical, industrial, and automotive, among others. It is suitable for applications where data must be securely stored and updated regularly. For example, it can be used in automobiles to store diagnostic codes, or in medical devices to store patient records.

The BR24G01FVM-3AGTTR also has a variety of features, such as an endurance rating of more than 100 million write cycles, a small form factor, a wide temperature range, and a low power consumption. It is capable of storing large amounts of data in a small space, making it ideal for applications requiring a large memory capacity.

The working principle of the BR24G01FVM-3AGTTR is based on its field-effect transistor. The transistor is composed of a source, drain, and gate terminals. When voltage is applied to any one of the terminals, current flows in and out of the transistor. This current flow can be used to write or erase data stored in the memory cell, thus allowing data to be stored or erased as required.

The BR24G01FVM-3AGTTR is a reliable form of semiconductor memory that is suitable for a range of applications, including aviation, medical, industrial, and automotive. It has a wide temperature range, a low power consumption, and a high endurance rating, making it ideal for applications where data must be securely stored and updated regularly.

The specific data is subject to PDF, and the above content is for reference

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