
Allicdata Part #: | BR24S16FV-WE2-ND |
Manufacturer Part#: |
BR24S16FV-WE2 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 16K I2C 400KHZ 8SSOPB |
More Detail: | EEPROM Memory IC 16Kb (2K x 8) I²C 400kHz 8-SSOPB |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 16Kb (2K x 8) |
Clock Frequency: | 400kHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | I²C |
Voltage - Supply: | 1.7 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-SSOPB |
Base Part Number: | BR24S16 |
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BR24S16FV-WE2 Memory Application Field and Working Principle
BR24S16FV-WE2 is part of the memory product line offered by Rohm. This memory has many advantageous features and is used in a variety of applications. This article will discuss the application field and working principle of the BR24S16FV-WE2.
In terms of its application field, the BR24S16FV-WE2 is designed for high-density memory applications. It is suitable for embedded industrial products, such as automotive, industrial, and consumer electronics. This memory products can withstand high temperatures, up to 125°C. It has low power consumption and is based on pin-compatible plastic 16-pin-package technology. This ensures that this memory has durability and long-term reliability.
The working principle of the BR24S16FV-WE2 memory is based on static random access memory (SRAM). SRAM is a type of memory that retains its contents as long as power is supplied. The data stored in SRAM is refreshed periodically to prevent it from being lost. SRAM is faster than dynamic random access memory (DRAM) and is often used in high-speed applications.
The BR24S16FV-WE2 memory has 16,384 x 16-bit organization, which consists of 65536 bits. It features fast access times of 10 ns and operates at 3.3 V. It can operate in either single-cycle or burst-mode operation and can be accessed continuously. The burst-mode operation provides for higher data transfer rates. The BR24S16FV-WE2 memory also has a write-protection feature, which helps protect the data stored in the memory from unauthorized access.
The BR24S16FV-WE2 memory also has a few other features, such as a an embedded parity check and an error correction code (ECC) check. The parity check is used to ensure that the data stored in the memory is correct. The ECC check is also used to detect errors in the data stored in the memory and to correct them, if necessary. The BR24S16FV-WE2 memory also has various power-down features, such as deep sleep and partial array self-refresh, which helps reduce the power consumed by the memory.
In conclusion, the BR24S16FV-WE2 memory is a high-density memory product that is mainly used in embedded industrial products. It has low power consumption, fast access times, and several features, such as parity checks and ECC checks, that help ensure the data stored in the memory is safe. The BR24S16FV-WE2 memory is an excellent choice for a variety of memory applications.
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