BR24G08NUX-3ATTR Allicdata Electronics
Allicdata Part #:

BR24G08NUX-3ATTR-ND

Manufacturer Part#:

BR24G08NUX-3ATTR

Price: $ 0.12
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 8K I2C VSON008X2030
More Detail: EEPROM Memory IC 8Kb (1K x 8) I²C 1MHz VSON008X20...
DataSheet: BR24G08NUX-3ATTR datasheetBR24G08NUX-3ATTR Datasheet/PDF
Quantity: 1000
4000 +: $ 0.10560
8000 +: $ 0.10326
12000 +: $ 0.10147
28000 +: $ 0.09907
Stock 1000Can Ship Immediately
$ 0.12
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: VSON008X2030
Base Part Number: BR24G08
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The memory device BR24G08NUX-3ATTR belongs to the super high-speed static RAM series, which features 3.3v operation voltage and single 3.3v power supply. This device is especially suitable for applications such as mobile phones and GPS navigation systems, communications and multimedia equipment, personal and notebook computers, household appliances, and industrial control systems.

The BR24G08NUX-3ATTR memory device comprises an 8Mbit (1M×8bit) static RAM containing 32,768 words each with 8 bits of data, which is packaged in a 48-pin TSOP II package. This device configures the output drivers in CMOS Schottky TTL (LSTTL) compatible design, and also having a built-in high-performance low-power CMOS technology. This chip is designed to work up to a clock frequency of 25MHz using 5ns read/90ns write access times, and it is designed to provide high reliability, high speed, and low power consumption performance.

The operating environment of the BR24G08NUX-3ATTR is based on two specific principles. The first is the "static RAM operating principle" which consists of a data path and a control flow, wherein the data is stored in a form of a 2-dimensional array structure with a row and a column when read/written or configured. The storage and retrieval of data is managed in such a way that when a row is specified, all the data stored in it for that particular session is available for use. This principle allows the device to achieve the highest speed read/write operations, with the least power consumption.

The other principle governing the operation of the memory device is the "page mode principle". This works in conjunction with the static RAM operating principle, in that when data has been identified, a request is sent to the active row buffer, where it is stored and also mapped to corresponding memory locations. This allows the device to be able to access the data stored in the active row buffer without having to continually access the DRAM array. This principle also allows for higher speed access rates by minimizing the number of address and data lines that must be cycled through to retrieve the data requested.

The BR24G08NUX-3ATTR offers beneficial features such as data retention, power down mode, output enable control, and fast read and write cycles. All of these features make the device flexible enough to achieve its varied application area and make it an economical choice for memory requirements in applications such as embedded systems. Furthermore, the device also has a long manufacturing life cycle as well as a high reliability and a wide operating temperature range (−55 to 125°C).

The specific data is subject to PDF, and the above content is for reference

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