BR24G128FVJ-3GTE2 Allicdata Electronics
Allicdata Part #:

BR24G128FVJ-3G2TR-ND

Manufacturer Part#:

BR24G128FVJ-3GTE2

Price: $ 0.18
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 128K I2C 8TSSOP
More Detail: EEPROM Memory IC 128Kb (16K x 8) I²C 400kHz 8-TSS...
DataSheet: BR24G128FVJ-3GTE2 datasheetBR24G128FVJ-3GTE2 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.16538
5000 +: $ 0.15192
12500 +: $ 0.14929
25000 +: $ 0.14574
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-TSSOP-BJ
Base Part Number: BR24G128
Description

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BR24G128FVJ-3GTE2 Memory: Application Field and Working Principle

The BR24G128FVJ-3GTE2 belongs to a family of non-volatile memory products that are used in a variety of applications. In this article, we will discuss its application field as well as its work principle.

Application Field

The BR24G128FVJ-3GTE2 is a very popular memory product. It is used in a variety of applications, such as digital camera memory cards, mobile phones, digital cameras, camcorders, and hand-held devices. It is also used in automotive systems, industrial devices, and home appliances.This memory product is available in several different form factors, such as SLC (Single-Level Cell), MLC (Multi-Level Cell), DRAM (Dynamic RAM), and NOR (Not-Only RAM).In addition, this non-volatile memory product is also used in embedded devices and medical applications. It is designed to reduce power consumption and provide long-term data storage.

Working Principle

The BR24G128FVJ-3GTE2 uses a non-volatile memory cell. This cell is composed of two parts, the first part is the charge-trap nitride layer, while the second part is the tunnel insulator layer.When a voltage is applied to the cell, the negative charge builds up within the charge trap layer, while the positive charge builds up in the tunnel insulator layer. This creates a potential difference across the layers, and this potential difference is used to store data in the cell.The cell can also be programmed and erased in a non-volatile manner. In other words, the data stored in the cell remains even after power is removed from the system.The BR24G128FVJ-3GTE2 is a very efficient memory product and is often used in low-power applications. It offers low power consumption and high storage density. One of the advantages of this type of memory is its low-cost per bit.

Conclusion

The BR24G128FVJ-3GTE2 is a highly versatile non-volatile memory product used in a variety of applications. It is used in digital cameras, mobile phones, automotive systems, industrial devices, and home appliances. Its efficient design and low-power consumption make it a desirable memory product for many applications. At the same time, it is able to store data even after power is removed, which is a great benefit for memory-dependent applications. In summary, the BR24G128FVJ-3GTE2 is a great option for applications that require low-cost, reliable, and efficient memory.

The specific data is subject to PDF, and the above content is for reference

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