Allicdata Part #: | BR24G16FJ-3AGTE2TR-ND |
Manufacturer Part#: |
BR24G16FJ-3AGTE2 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 16K I2C 1MHZ 8SOPJ |
More Detail: | EEPROM Memory IC 16Kb (2K x 8) I²C 1MHz 8-SOP-J |
DataSheet: | BR24G16FJ-3AGTE2 Datasheet/PDF |
Quantity: | 2500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 16Kb (2K x 8) |
Clock Frequency: | 1MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | I²C |
Voltage - Supply: | 1.6 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP-J |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BR24G16FJ-3AGTE2 is a type of memory that is widely used in electronic devices for storing information. It is a new generation of non-volatile memory, developed by major memory manufacturers such as Samsung and Toshiba. The BR24G16FJ-3AGTE2 has a wide range of applications in various electronic devices, and the working principle of this type of memory is not difficult to understand.
Applications
BR24G16FJ-3AGTE2 memory is mainly used in mobile devices such as phones and tablets. It is widely used by most major device manufacturers to store data and applications, as it provides high memory density and fast access speed. Furthermore, BR24G16FJ-3AGTE2 is also used in digital cameras, digital camcorders and digital media players. Usually, the devices will have a separate built-in memory slot specifically designed to hold the BR24G16FJ-3AGTE2 memory. In addition, this type of memory is also used in several industrial applications, such as manufacturing robots, smart sensors, and medical devices.
Working Principle
BR24G16FJ-3AGTE2 memory relies on flash memory technology. It is composed of several millions of memory cells that are connected together. Each cell contains two transistors and two capacitors. The two transistors act as the access and select gates for the memory cell. The two capacitors are used to store charge, depending on the voltage applied to them. When a low voltage is applied to the gates, the cell is set to be in the write-enable state and the charge is stored in the cell. Whenever a high voltage is applied, the capacitors in the cell will release the stored charge and the cell will be in the read-enable state.
In addition, the BR24G16FJ-3AGTE2 memory has an internal controller, which is responsible for managing the memory operations, such as reading, writing, and erasing data stored in the cells. The controller will also monitor the status of the cells, detecting and correcting any errors that may occur.
Advantages of BR24G16FJ-3AGTE2
BR24G16FJ-3AGTE2 memory offers several advantages over other types of memory. First, it provides fast access speed and high memory density. Second, it is a non-volatile memory, which means that data stored in the memory will remain intact even when the power is turned off. Third, it is also durable, reliable, and power-efficient, making it suitable for long-term use.
Conclusion
BR24G16FJ-3AGTE2 is a non-volatile memory that is widely used in electronic devices for storing information, with Applications in mobile devices, digital cameras and industrial robots. The working principle involves the use of two transistors and two capacitors to store charge, depending on the voltage applied to them. Furthermore, BR24G16FJ-3AGTE2 also has several advantages such as fast access speed, high density, non-volatility, power-efficiency and durability.
The specific data is subject to PDF, and the above content is for reference
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