BR24G512-3A Allicdata Electronics
Allicdata Part #:

BR24G512-3A-ND

Manufacturer Part#:

BR24G512-3A

Price: $ 1.31
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 512K I2C 1MHZ 8-DIP-T
More Detail: EEPROM Memory IC 512Kb (64K x 8) I²C 1MHz 8-DIP-T
DataSheet: BR24G512-3A datasheetBR24G512-3A Datasheet/PDF
Quantity: 1949
1 +: $ 1.31000
10 +: $ 1.27070
100 +: $ 1.24450
1000 +: $ 1.21830
10000 +: $ 1.17900
Stock 1949Can Ship Immediately
$ 1.31
Specifications
Series: --
Packaging: Tube 
Part Status: Not For New Designs
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP-T
Description

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BR24G512-3A is a type of memory integrated circuit. It is often used in industrial and commercial applications, mainly in computers and mobile applications. The purpose of the integrated circuit is to store data and to speed up the operation of information processing activities. The BR24G512-3A is a Flash Memory device produced by Samsung Electronics. This integrated memory can store up to 32M bytes of data, depending upon the configuration. The device is comprised of two components: a CMOS/VLSI Interface and a totally integrated solution for Flash Memory.

The CMOS/VLSI interface is the most important part of the BR24G512-3A integrated circuit. This part of the integrated circuit is responsible for the communication between the system’s microprocessor and the integrated memory. This interface serves as a bridge between the two elements and it ensures that the memory is able to receive and process the commands which are issued by the microprocessor. The CMOS/VLSI interface is also responsible for powering up the memory and for controlling power consumption.

The integrated Flash Memory is the second component of the BR24G512-3A. The Memory consists of a NAND Gate and a Write/Read circuit. The NAND Gate is responsible for the access and processing of data during the read/write process. It is responsible for the data transfer between the microprocessor and the memory. The Write/Read circuit is responsible for encoding, decoding and verifying the data stored in the memory.

The BR24G512-3A integrated circuit is used in a wide variety of applications. It is used in mobile devices such as smartphones and tablets, as well as in computers, digital cameras and other electronic devices. The main advantage of using the BR24G512-3A is that it has a low cost compared to other Flash Memory integrated circuits. The device also has a high speed programming and read cycle, making it suitable for real-time applications.

The BR24G512-3A integrated memory has a very high durability. It can withstand extreme temperatures, static electricity, and other environmental factors. The integrated memory also has a low power consumption and operates reliably even at low voltages. Furthermore, its reliability and durability are enhanced by its low cost manufacturing process.

The BR24G512-3A integrated memory provides a great solution for industrial design. It is an ideal solution for industrial applications, as it has a good storage capacity, a high speed programming and read cycle, and a low cost. The device is also very reliable and can withstand extremely high and low temperatures. As such, the BR24G512-3A is perfect for applications like embedded devices and automotive control systems.

The BR24G512-3A integrated memory is an ideal choice for a wide variety of applications. It provides a cost-effective solution for a diverse range of memory storage needs. The integrated memory is reliable, durable and has a low power consumption. Its high speed programming and read cycle makes it ideal for real-time applications. Finally, the integrated memory is also compatible with most microprocessors, making it a great choice for embedded device design.

The specific data is subject to PDF, and the above content is for reference

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