BR24L08FV-WE2 Integrated Circuits (ICs)

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Memory is a basic building block for any computer system, and changes the way data is stored and accessed. The BR24L08FV-WE2 is a type of EEPROM (electrically erasable programmable read-only memory) that is used in memory systems. It is designed for low-voltage operation, reducing the energy requirements of applications, and has a space-efficient design. This application note provides an overview of the BR24L08FV-WE2 and explains its working principle and application field.

Application Field

The BR24L08FV-WE2 is a low-voltage, 8-pin EEPROM which is ideal for memory systems. It is a cost-efficient solution suitable for applications such as automotive, industrial, medical, audio, medical, and consumer applications that require high-speed data retention. The device offers a wide range of features and benefits, including a low-power 1.8 Volt switching voltage, a wide operational temperature range (up to 125°C, -40°C to 85°C), high speed writing of up to 8 Mbits, low write current of 1.5 mA and fast access cycle time of 135 mS, and fast erase cycle time of 50 mS.

The BR24L08FV–WE2 offers a wide range of device and system capabilities that are particularly beneficial for embedded application programmers. In addition to its basic EEPROM functionality and space-saving pinout, it also allows users to incorporate some high-tech and new features such as a power-saving Multi-Level Cell (MLC) that can store multiple bits per cell up to 4 bits per cell. It is also possible to increase memory capacity with an on-board memory array expansion, and to reduce system power draw with a low-voltage write cycle.

Working Principle

The BR24L08FV-WE2 is used in many memory systems. Its working principle is based on the principle of storing and retrieving data. The device has a non-volatile memory which requires no power to maintain its stored data. This includes the ability to program, read, and erase data from its memory cells. The internal structure of the memory array is organized in a grid format, with each memory cell containing an 8-bit address, an 8-bit data, an 8-bit data mask, and a 3-bit status register.

Data can be programmed and/or overwritten into the memory cells as a sequence of 8-bit words of data, each with its own 8-bit address. To access a specific memory location, the address is shifted into the device, and the data is read. Data can also be written to or erased from memory locations. Erasing is done by bonding all bits of a memory cell to 0, which requires the application of a voltage pulse to the entire chip. The erase operation takes longer than writing, but it effectively erases the contents of the entire chip.

The BR24L08FV-WE2 is designed to be used with a wide range of memory systems and provides the user with an efficient and reliable solution for data storage and retrieval. This EEPROM device can be used for applications that require low-power consumption, high speed, wide temperature range, and high write frequency. It provides a low-cost, low-power solution for consumer, automotive, industrial, audio, and medical applications.

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