
Allicdata Part #: | BR24S08FVJ-WE2-ND |
Manufacturer Part#: |
BR24S08FVJ-WE2 |
Price: | $ 0.27 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 8K I2C 400KHZ 8TSSOP |
More Detail: | EEPROM Memory IC 8Kb (1K x 8) I²C 400kHz 8-TSSOP-... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.24320 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 8Kb (1K x 8) |
Clock Frequency: | 400kHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | I²C |
Voltage - Supply: | 1.7 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: | 8-TSSOP-BJ |
Base Part Number: | BR24S08 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BR24S08FVJ-WE2 Memory
BR24S08FVJ-WE2 is a memory device based on the FRAM (Ferroelectric Random Access Memory) technology. It is specifically designed for automotive applications and power supply systems that have strict performance requirements. This technology allows for high performance, low energy consumption, and reliability.
The BR24S08FVJ-WE2 is a type of non-volatile memory, meaning that it does not require a constant power supply to store data. With its robust design, the device is able to withstand significant environmental fluctuations without any data loss. The BR24S08FVJ-WE2 offers fast read and write performance, as well as powersave capabilities that reduce consumption when the device is idle.
As forapplication fields, the BR24S08FVJ-WE2 device is ideally suited for automotive applications, such as engine control units, airbags, power steering systems, and emission control systems. It can also be used in other automation and industrial systems, such as HVAC, laboratory equipment, robotics, and manufacturing.
The working principle of the BR24S08FVJ-WE2 memory is based on the FRAM technology. FRAM is a type of non-volatile memory that uses ferroelectric materials to store data. The material\'s unique structure allows it to remain in a charged state even when powered off, meaning that data can be stored and retrieved quickly and efficiently.
At the heart of the BR24S08FVJ-WE2 device is a series of ferroelectric capacitors. When a voltage is applied, the capacitors store electrical charges which represent binary data. This data can then be read or written using traditional memory access techniques, such as I²C, SPI, or UART.
The BR24S08FVJ-WE2 device also has robust electrostatic discharge (ESD) protection and a wide temperature range, allowing it to be used in a variety of environmental conditions. Additionally, the BR24S08FVJ-WE2 also features self-refresh capabilities, enabling data to remain consistent even when the device is powered off.
In summary, the BR24S08FVJ-WE2 device is an ideal solution for automotive and industrial applications that require reliable non-volatile memory. With its robust design, fast performance, and low energy consumption, it is an ideal choice for embedded systems.
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