
Allicdata Part #: | BR24S08FVT-WE2TR-ND |
Manufacturer Part#: |
BR24S08FVT-WE2 |
Price: | $ 0.26 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 8K I2C 400KHZ 8TSSOP |
More Detail: | EEPROM Memory IC 8Kb (1K x 8) I²C 400kHz 8-TSSOP-... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.23576 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 8Kb (1K x 8) |
Clock Frequency: | 400kHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | I²C |
Voltage - Supply: | 1.7 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP-B |
Base Part Number: | BR24S08 |
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BR24S08FVT-WE2 Memory
BR24S08FVT-WE2 is a high-density 32K x 8bit Memory that can be used as an electrically erasable programmable read only memory (EEPROM). It is widely used in a variety of devices that require a large amount of memory. Some of the most common applications are automotive devices, communication systems, and medical devices.
Applications
The BR24S08FVT-WE2 offers an unrivalled degree of reliability and endurance in a wide range of applications. These include data storage and retrieval in automotive, communication and medical systems. Its high write and erase endurance of up to 100,000 cycles ensure a longer life for these products.
The EEPROM can store and retrieve data quickly, enabling it to be used in data-intensive applications such as communication systems and for updating software in automotive systems. It has an operating temperature range of -40 to +125°C, making it suitable for a variety of applications.
The EEPROM also has a low current consumption of 0.1uA in Standby mode, making it power efficient, as well as its low power consumption during write operations. The low-power operation makes the EEPROM ideal for devices that require low-power operation such as digital cameras and other devices.
Working Principle
The BR24S08FVT-WE2 consists of an 8-bit data bus and two control lines. It includes a Write Enable (WE) input and an operating voltage range from 1.65 V to 5.5 V. The memory needs to be programmed by applying a program voltage of 12V to the WE pin. Once programmed, the EEPROM can store data in its cells. When a read request is made, the data stored in the cells is transfered to a data bus.
The memory is ideal for high-speed applications as data can be read and written at a speed of up to 1 MHz. Data can be written to a single byte or multiple bytes by setting the WE pin to the logic 0 level. The data is written on the rising edge of the WE pulse when the logic level is set to 0 and a chip enable signal is activated.
The BR24S08FVT-WE2 offers an array of features, such as data protection, where it can protect stored data from external disturbances such as electromagnetic interference, static electricity and signal noise. Data can also be stored for up to 10 years in the absence of power, making it suitable for devices that will be used for a long period of time.
Overall, the BR24S08FVT-WE2 Memory is an excellent choice for applications requiring a large amount of storage and data protection, as well as for applications that require fast data read and write functions, making it a great choice for automotive, communication and medical applications.
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