BR24T04FVT-WE2

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Memory

BR24T04FVT-WE2 is an advanced memory device from Renesas Electronics. It is from the company\'s M-FRAM family and is designed for automotive, communications, industrial and IoT applications. The chip is capable of up to 8 megabits of non-volatile memory and features ultra-low power consumption and long programming cycle times.

The chip is available in a variety of packages, including a SSOP-18, WLCSP-20, or TSSOP-20. It has two write control pins, CLK and WE, which control the read/ write status of the device. It also has two address bits, A0 and A1, which are used to select a particular memory block to be read or written. When the chip is powered up, all the data stored in the memory is retained until it is written to the memory.

The BR24T04FVT-WE2 is powered by a 1.5V to 5.5V voltage supply and consumes just 0.2mA of current at 5V. It has a maximum read/write time of 20ns and a minimum programming time of 1µs. The chip also features a proprietary algorithm for improved data retention and error correction code (ECC) for enhanced data integrity.

The BR24T04FVT-WE2 memory device can be used for a variety of applications, such as in automotive systems, wireless communications, consumer products, industrial systems, and in IoT applications. The chip can provide an economical solution for embedded systems that need to store data in a non-volatile memory with low power consumption. It also has the capability to withstand harsh environmental conditions, such as extreme temperatures and vibration.

In summary, the BR24T04FVT-WE2 is an advanced memory device from Renesas Electronics. It is available in a variety of packages and has two write control pins and two address bits. It is powered by a 1.5V to 5.5V voltage supply and consumes only 0.2mA of current at 5V. The chip can be used for a variety of applications and has a proprietary algorithm for improved data retention and ECC for enhanced data integrity.

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