BR24T256FVT-WE2 Allicdata Electronics
Allicdata Part #:

BR24T256FVT-WE2TR-ND

Manufacturer Part#:

BR24T256FVT-WE2

Price: $ 0.39
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 256K I2C 8TSSOP
More Detail: EEPROM Memory IC 256Kb (32K x 8) I²C 400kHz 8-TSS...
DataSheet: BR24T256FVT-WE2 datasheetBR24T256FVT-WE2 Datasheet/PDF
Quantity: 3000
1 +: $ 0.39000
10 +: $ 0.37830
100 +: $ 0.37050
1000 +: $ 0.36270
10000 +: $ 0.35100
Stock 3000Can Ship Immediately
$ 0.39
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP-B
Base Part Number: BR24T256
Description

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BR24T256FVT-WE2 Memory Application Field and Working Principle

BR24T256FVT-WE2 is a type of memory device produced by Winbond Electronics Corporation, bringing outstanding performance and efficiency to electronic systems. It’s a type of non-volatile memory that can store data even when there is an electrical power failure. It has become increasingly popular in systems requiring long-term data retention such as programmable logic controllers (PLCs), automotive applications, embedded systems and medical electronics.

Applications

BR24T256FVT-WE2 is widely used to provide long-term, reliable and non-volatile mass storage for a range of embedded applications. Such as industrial automation, medical electronics, automotive systems, aviation and aerospace, robotics, PLC, etc.

The average read cycle time of the device is 1.8µs, which is three times faster than that of a standard EEPROM device. This allows users to read and write data quickly, reducing the overall system latency due to the non-volatile read and write operations. The device also features a low power consumption, released in 7V to 12V supply range with an industry-standard SOT-23 package.

Working Principle

The BR24T256FVT-WE2 device works in a similar way to other non-volatile memories. This includes flash memory, EEPROM, and SRAM. Non-volatile memory refers to memory that can retain its data even when power is removed. This means that data can be stored in the memory for long periods of time, even if power is removed.

The BR24T256FVT-WE2 works by storing data in an array of memory cells. These cells are made up of a combination of transistors, diodes, and capacitors. The memory cells are arranged into rows and columns, forming an array of addresses.

The BR24T256FVT-WE2 has the benefit of being able to store both program code and data in the same device. This arrangement allows the user to both execute program code and read and write data all in one device.

The read/write operations are performed using the two-wire Interface, which operates in a master-slave arrangement. This comprises of a Serial Data (SDA) line, which is used to send commands and data to the device, and a Serial Clock (SCK) line, which is used to synchronize the operations of the device.

The device supports memory read, program and erase operations. The programming time is extremely fast, taking only 0.5ms for the programming time. The erase time is typically around 5ms.

The BR24T256FVT-WE2 is also capable of wear-leveling, which is a method for maintaining program code and data across multiple cells over time. This helps extend the life of the device and ensure that data is retained for as long as possible.

Conclusion

BR24T256FVT-WE2 is a non-volatile memory device that offers great performance and efficiency to embedded systems. With its fast read cycle time, low power consumption, and wear-leveling capabilities, it is ideal for storing program code and data in a range of applications.

The specific data is subject to PDF, and the above content is for reference

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