BR25010N-10SU-1.8

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Memory products, especially DRAM, are the basic components in modern information system. As one of the high-performance memory products, BR25010N-10SU-1.8 is widely used in today’s modern devices and systems, such as smartphones, computers, network devices, and consumer electronic products.

BR25010N-10SU-1.8 is a Double Data Rate Synchronous Dynamic Random Access Memory Module, typically referred to as DDR4 SDRAM. It is operated by a differential clock and performs transfer operations twice per clock cycle, allowing for higher speed data transfer. DDR4 SDRAM is designed to use less power than DDR3 SDRAM and is backward compatible with DDR3.

At the module level, BR25010N-10SU-1.8 is built with 6 pieces of 4 Gigabit DDR4 SDRAMs, which offer a total of 3.1GB/s data rate and 10.6GB/s bandwidth at the DDR4-2133 frequency. For the electrical characteristics, the organized address space of BR25010N-10SU-1.8 provides up to 1331 bits of data. Its power supply includes +1.2V and adds PLL + 1.8V. The operating temperature range is 0 to +85℃.

The physical structure of BR25010N-10SU-1.8 consists of 72 signal pins of 1.27mm and 6 soldering legs of 2.54mm. The modules are available in nine capacities of 1GB with the organization of x8 and dual rank. The length and width of the module are 2.1 inches and 0.9 inches, respectively.

The works of BR25010N-10SU-1.8 are the same as other dynamic memory devices. Its memory array is an array of cells that can be read and written. Each cell is composed of a capacitor, a transistor switch and a bit line pair. A logic circuit is provided to control the operation of read and write. The logic circuit reads the command from the control line and controls the access to the memory array. The array drives are directly controlled by the control logic to determine the data path of each bit.

When writing data, the data is written to the cell via the bit line, and the precharging discharges the charge in the data line. After the data is read from the cell, the precharge sets the cell to the precharge level. The data is then read from the cell through the sense amplifier. The DRAM controller manages the data transfer, refreshing and other operations. It accepts commands from the host, controls state machines to perform the required operations, and sends response to the host when necessary.

BR25010N-10SU-1.8 are suitable for a wide range of applications, such as automotive, digital media, gaming, and cyber security. These applications need to ensure high speed, low power consumption and a large number of consecutive data operations. As one of the high-performance memory products, BR25010N-10SU-1.8 can provide them with reliable and low-cost performance.

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