BR25160N-10SU-2.7 Allicdata Electronics
Allicdata Part #:

BR25160N-10SU-2.7-ND

Manufacturer Part#:

BR25160N-10SU-2.7

Price: $ 0.41
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 16K SPI 3MHZ 8SOIC
More Detail: EEPROM Memory IC 16Kb (2K x 8) SPI 3MHz 8-SOIC
DataSheet: BR25160N-10SU-2.7 datasheetBR25160N-10SU-2.7 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.37617
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: BR25160
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

In the field of memory, BR25160N-10SU-2.7 is a high-end storage device specially designed for embedded systems. It has a simple structure, excellent performance and stable operation in the market, and is used in many different fields. This article will explain the application field and working principle of BR25160N-10SU-2.7.

BR25160N-10SU-2.7 is a non-volatile, read-only memory (NVRAM) device developed by Bronson Technology Inc. It uses a two-terminal resistor-based memory cell structure, which has the advantages of high stability and long service life. It is mainly used in embedded systems, such as in automotive, industrial, and consumer products. It can also be used in data storage for many automated systems, such as laptops, tablets, and handheld devices. It is also used in storage devices for data acquisition, image processing, signal processing, sensor interfacing, and pattern recognition.

In its working principle, BR25160N-10SU-2.7 is based on single electron tunneling (SET) technology, which is a form of charge-driven memory technology used to store data bits in a small capacitor. A layer of barrier material is inserted between two electrodes, allowing the electrons to tunnel to the other side in a controlled manner. This layer of barrier material is divided into two parts, enabling the electrons to flow to two different memory cells. By reading the charge in the two memory cells, the bit can be determined.

BR25160N-10SU-2.7 can store a maximum of 128K bits of data, with a low power consumption of only 2.7 mW. It has a low failure rate and can retain the stored data when power is turned off. This makes it an ideal choice for most embedded systems. It also has a wide range of operating temperatures, from -20°C to 75°C, which makes it suitable for all kinds of environments.

BR25160N-10SU-2.7 is an excellent choice for a wide variety of embedded applications due to its high performance, stability and low power consumption. It can be used in the automotive, industrial, and consumer product fields, and is used in data storage for many automated systems, such as laptops, tablets, and handheld devices. Its simple structure and wide temperature range make it a reliable and efficient choice for such applications.

The specific data is subject to PDF, and the above content is for reference

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