Allicdata Part #: | BR25G512FJ-3GE2TR-ND |
Manufacturer Part#: |
BR25G512FJ-3GE2 |
Price: | $ 0.43 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | SPI BUS EEPROM |
More Detail: | EEPROM Memory IC 512Kb (64K x 8) SPI 10MHz 8-SOP-... |
DataSheet: | BR25G512FJ-3GE2 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.39608 |
5000 +: | $ 0.37132 |
12500 +: | $ 0.35907 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 512Kb (64K x 8) |
Clock Frequency: | 10MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.8 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP-J |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory components are essential for many electronic systems, allowing computers, devices and programs to store and maintain information in different ways. BR25G512FJ-3GE2 is one such memory device that can be used for a variety of applications.
BR25G512FJ-3GE2 is a SDRAM device that stores 512Mbits of data in 32MWord x 16bits organization. Each word has two bytes, giving a total of 64MB memory. The device is primarily designed for low power applications and low voltage operation, and is ideal for use in low cost commercial applications. It has a maximum power dissipation of 500mW, making it suitable for battery powered systems.
The BR25G512FJ-3GE2 uses a synchronous architecture, which means that the clock signal synchronizes data transfers with the operations of the system bus. This means that data can be read and written more quickly, as the device can be prepped ahead of time to receive instructions from the bus. The clock speed of the device is 133 MHz, with a burst rate of 266MHz, and a cycle time of 7.5ns.
This memory device also has an advanced interface which allows for high performance throughput. The device has a 3.3V CMOS interface and an EDO (Extended Data Out) feature. This allows for higher data rates and shorter bus latencies, resulting in increased overall system performance. The device also supports two modes of operation, burst and non-burst. In burst mode, data is read out continuously while in non-burst mode the data is fetched in smaller chunks.
In terms of applications, BR25G512FJ-3GE2 is suitable for use in many low power embedded systems such as portable media players, digital cameras and personal digital assistants. Its small size and low power requirements make it an ideal choice for these types of applications. The device can also be used in low cost industrial applications such as factory automation, point-of-sale systems and handheld computers.
Overall the BR25G512FJ-3GE2 is a reliable and efficient memory device that can be used for many different purposes. It has an advanced interface which allows for high performance throughput and is suitable for low power embedded systems and industrial applications. The synchronous architecture also ensures faster data transfer speeds and minimal power consumption, making it an ideal choice for many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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