BR25H010F-2LBH2 Integrated Circuits (ICs) |
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Allicdata Part #: | BR25H010F-2LBH2TR-ND |
Manufacturer Part#: |
BR25H010F-2LBH2 |
Price: | $ 0.34 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 1K SPI 10MHZ 8SOP |
More Detail: | EEPROM Memory IC 1Kb (128 x 8) SPI 10MHz 8-SOP |
DataSheet: | BR25H010F-2LBH2 Datasheet/PDF |
Quantity: | 250 |
250 +: | $ 0.29968 |
500 +: | $ 0.29531 |
750 +: | $ 0.29076 |
1250 +: | $ 0.28466 |
2500 +: | $ 0.27662 |
6250 +: | $ 0.25933 |
12500 +: | $ 0.25078 |
25000 +: | $ 0.23576 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 1Kb (128 x 8) |
Clock Frequency: | 10MHz |
Write Cycle Time - Word, Page: | 4ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 125°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package: | 8-SOP |
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Memory is one of the essential components of a computer system. It is used to store and retrieve data from a particular location. BR25H010F-2LBH2 is a type of memory that is used in a variety of applications. It is a 2Mb (2 Megabyte) asynchronous SRAM (Static Random Access Memory) with a 25 ns access time.
The BR25H010F-2LBH2 memory is designed for use in a wide range of applications including embedded systems, video games, computer networks, and digital signal processing. This type of memory is used in applications that require fast access time and reliability.
The BR25H010F-2LBH2 memory is made up of two parts, the memory core and the address bus. The memory core consists of a series of 16-bit cells that can be read and written to. Each cell has an address assigned to it and they can be addressed separately. The address bus connects the memory core to the rest of the system and allows the memory core to be accessed from different parts of the system.
The working principle of the BR25H010F-2LBH2 memory is based on the principle of Static Random Access Memory (SRAM). SRAM is different from standard dynamic RAM (DRAM) in that it does not need to be regularly updated. In SRAM, data is stored in a series of cells that are connected with access transistors. When the cell is addressed, the transistor opens and the data is read. The memory cell can be written to by changing the state of the transistor.
The BR25H010F-2LBH2 memory is capable of storing up to 8-bits of data within each cell and can achieve access times of up to 25 ns. This means that the memory is fast enough to be used in many real-time applications. Since the memory cells are made of SRAM, they are reliable and can be accessed many times without becoming corrupted.
Overall, the BR25H010F-2LBH2 is a type of memory that is used in a variety of applications. It is made up of two parts, the memory core and the address bus, which allows it to be accessed from different parts of the system. The cells are made up of SRAM and are fast and reliable, making them suitable for real-time applications.
The specific data is subject to PDF, and the above content is for reference
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