BR25H010F-2LBH2 Allicdata Electronics

BR25H010F-2LBH2 Integrated Circuits (ICs)

Allicdata Part #:

BR25H010F-2LBH2TR-ND

Manufacturer Part#:

BR25H010F-2LBH2

Price: $ 0.34
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 1K SPI 10MHZ 8SOP
More Detail: EEPROM Memory IC 1Kb (128 x 8) SPI 10MHz 8-SOP
DataSheet: BR25H010F-2LBH2 datasheetBR25H010F-2LBH2 Datasheet/PDF
Quantity: 250
250 +: $ 0.29968
500 +: $ 0.29531
750 +: $ 0.29076
1250 +: $ 0.28466
2500 +: $ 0.27662
6250 +: $ 0.25933
12500 +: $ 0.25078
25000 +: $ 0.23576
Stock 250Can Ship Immediately
$ 0.34
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP
Description

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Memory is one of the essential components of a computer system. It is used to store and retrieve data from a particular location. BR25H010F-2LBH2 is a type of memory that is used in a variety of applications. It is a 2Mb (2 Megabyte) asynchronous SRAM (Static Random Access Memory) with a 25 ns access time.

The BR25H010F-2LBH2 memory is designed for use in a wide range of applications including embedded systems, video games, computer networks, and digital signal processing. This type of memory is used in applications that require fast access time and reliability.

The BR25H010F-2LBH2 memory is made up of two parts, the memory core and the address bus. The memory core consists of a series of 16-bit cells that can be read and written to. Each cell has an address assigned to it and they can be addressed separately. The address bus connects the memory core to the rest of the system and allows the memory core to be accessed from different parts of the system.

The working principle of the BR25H010F-2LBH2 memory is based on the principle of Static Random Access Memory (SRAM). SRAM is different from standard dynamic RAM (DRAM) in that it does not need to be regularly updated. In SRAM, data is stored in a series of cells that are connected with access transistors. When the cell is addressed, the transistor opens and the data is read. The memory cell can be written to by changing the state of the transistor.

The BR25H010F-2LBH2 memory is capable of storing up to 8-bits of data within each cell and can achieve access times of up to 25 ns. This means that the memory is fast enough to be used in many real-time applications. Since the memory cells are made of SRAM, they are reliable and can be accessed many times without becoming corrupted.

Overall, the BR25H010F-2LBH2 is a type of memory that is used in a variety of applications. It is made up of two parts, the memory core and the address bus, which allows it to be accessed from different parts of the system. The cells are made up of SRAM and are fast and reliable, making them suitable for real-time applications.

The specific data is subject to PDF, and the above content is for reference

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