BR25L160FV-WE2

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The BR25L160FV-WE2 is a type of memory utilized for nonvolatile storage applications. It is an EEPROM that is a 16-Mbit (1 Megabit x 16), 9-asa wide, CMOS EEPROM that utilizes an external mini-SPI interface. It is ideal for small capacity nonvolatile memory applications.

Application field:

The BR25L160FV-WE2 is the ideal choice for nonvolatile memory applications in the automotive, consumer electronics, and industrial markets. This EEPROM is ideal for applications such as data logging of engine operation parameters, system passwords, and security settings. It is also suitable for applications such as storage of firmware in embedded systems, small capacity data storage, and multimedia memory.

Working Principle:

The BR25L160FV-WE2 is organized into eight banks of 16 Mbits and employs an advanced fail-safe error-correction scheme. The memory is designed such that when a 4-bit burst read is performed, a 4-bit error-correction code (ECC) is appended during read. Any single-bit error will be automatically corrected, and all multi-bit errors are flagged with an “all ones” code.

It operates with a single 3.3V power supply. Data can be programmed into the device at a rate of 10-bytes/second under NMOS programming conditions and 80 bytes/second under CMOS programming conditions. The memory can withstand up to 500,000 write cycles and provides 35 years of maximum data retention time. It is available in a 24-pin SOIC package.

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