BR34E02FVT-3E2 Integrated Circuits (ICs)

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Memory is a kind of important component in computers and other electronic devices, which stores programs and data. BR34E02FVT-3E2 is a low power static random access memory (SRAM) component that has a wide range of applications. This article will discuss the application field and working principle of BR34E02FVT-3E2.

Application field of BR34E02FVT-3E2

The BR34E02FVT-3E2 is a low-power, low-voltage SRAM component specifically designed for applications in low-power embedded systems. It features an integrated memory array with SRAM cells grouped into four banks and uses a 6-bit address bus, capable of storing up to 75,664 bits (6.25K x 8 bits) of data. This component is well-suited for applications with limited power requirements and tight memory constraints, such as portable media players, set-top boxes, video gaming consoles, and embedded industrial control systems. It also offers a fast access time (10ns), a wide operating temperature (from -55°C to 125°C), and a low-power standby mode, making it suitable for battery powered and other applications requiring low power consumption.

Working Principle of BR34E02FVT-3E2

The BR34E02FVT-3E2 is a static RAM component, which means that it does not need to be periodically refreshed in order to maintain the data stored in its memory cells. It uses a single-transistor memory cell, which utilizes a transistor and several other components, such as capacitors, resistors, and diodes, to store one bit of data. The basic operation of the BR34E02FVT-3E2 is based on the application of voltage across its memory cells. When the voltage is applied to a select gate, it charges up the related capacitor and generates a data bit. This bit is stored in a latch, allowing the cell to retain its data until the voltage is reversed, thus allowing the memory implementation to be non-volatile.

The BR34E02FVT-3E2 utilizes a multi-layer architecture with an internal address counter, allowing data to be addressed sequentially. This makes it suitable for applications requiring rapid data read and write operations, such as multimedia applications. It also offers an in-system programmable feature, which allows the internal address counter to be programmed, enabling applications to access the memory array in different sequences.

The BR34E02FVT-3E2 is also equipped with a variety of onboard features to ensure proper functionality, such as parity and error checking, auto-power control, temperature compensation, and read/write back control. These features ensure reliable operation of the component in various Power Down modes, reducing power consumption and enhancing system performance.

The BR34E02FVT-3E2 is an efficient, low-power SRAM component that offers a high-performance solution for embedded systems requiring limited power and memory constraints. With its comprehensive feature set, robust build quality, and high-speed operation, it is an excellent choice for mission-critical embedded applications.

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