BR34L02FVT-WE2 Integrated Circuits (ICs)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	2Kb (256 x 8)
Clock Frequency:	400kHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	I²C
Voltage - Supply:	1.7 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP-B
Base Part Number:	BR34L02

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Memory: BR34L02FVT-WE2 application field and working principle

Introduction

Memory is one of the most fundamental components of electronic systems. It stores and stores data, providing fast access and processing of that data. The BR34L02FVT-WE2 is a non-volatile memory module designed with applications in the automotive, industrial, and aerospace industries. This article explains the application field of the BR34L02FVT-WE2 and briefly describes its working principle.

Application Field

The BR34L02FVT-WE2 is a version of the popular SONY BR34L02 System Memory Unit. It is ideal for in-flight monitoring and control systems, such as engine and flight control systems. It is also the perfect choice for avionics systems, such as inertial navigation, attitude measurement, attitude control, and communication systems. Additionally, it is well-suited for automotive applications, such as in-vehicle entertainment systems, engine control systems, airbag control systems, and safety control systems.The BR34L02FVT-WE2 is an all-in-one package that includes 64KB of memory and all associated control circuitry. The unique pin-out of the module allows for easy integration into existing systems with minimal effort. In addition, it features enhanced reliability and durability and is highly resistant to shock and vibration. The temperature range is -40℃ to +125℃, making it well suited for use in harsh environments.

Working Principle

The BR34L02FVT-WE2 utilizes FRAM (Ferroelectric Random Access Memory) technology to provide non-volatile memory storage and quick access. FRAM is a type of non-volatile memory that uses tiny switches called ferroelectric tunnel junctions to store electrical charges instead of electrons. This technology has a number of advantages over traditional technologies, including faster read/write times, lower power consumption, and greater memory density.The BR34L02FVT-WE2 features an asynchronous operating mode in which the memory can be accessed on demand. This means that data access does not have to wait for a clock signal and can be accessed whenever the user requests it. This reduces latency and increases the overall performance of the system.In addition to its asynchronous operating mode, the BR34L02FVT-WE2 features synchronous and burst modes. In burst mode, the system can access data in a continuous stream, increasing throughput and reducing latency. In synchronous mode, the memory is accessed on a predetermined cycle, allowing it to be used for data buffering, memory mapping, and signal routing.

Conclusion

The BR34L02FVT-WE2 is an advanced non-volatile memory module designed for use in challenging environments. Its versatility and reliability make it an ideal choice for automotive, industrial, and aerospace applications. Furthermore, its FRAM technology provides fast and efficient memory access, making it well suited for applications requiring quick response times.

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