BR34E02FVT-WE2

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BR34E02FVT-WE2 is a type of semiconductor memory, specifically Mobile Low Power DDR SDRAM. It is dramatically low power consuming as well as having higher performance. It is widely used in mobile applications as well as automotive, industrial, and general embedded applications.

The main application fields and working principles of BR34E02FVT-WE2 are as follows:

1. Mobile Application Field

BR34E02FVT-WE2 is mainly used in mobile devices such as smartphones and tablets with high performance requirement and low power consumption, helping to maintain optimum memory performance and meet power efficiency needs.

BR34E02FVT-WE2 provides up to 4GB of low power DDR SDRAM in page programs or 1GB in page bursts. It also contains a comprehensive set of features allowing it to respond quickly to different DRAM command and access requests.

The advanced ZQ calibration feature which eliminates need for external adjustment of ZQ and programmable ODT can maximize the memory performance of the device. The differential data strobe and VREFDQ are optimized to compensate for the proper data capture so that the output data can be correctly translated. The on-die termination (ODT) feature also improves data integrity and reduces power consumption by as much as 17%.

2. Automotive Application Field

BR34E02FVT-WE2 can also be used for automotive applications such as infotainment and ADAS systems with high reliability and flexibility which require wide temperature and multiple frequencies. It supports both 32-bit data and 72-bit ECC for safety related applications.

The wide voltage range of 1.2 ~ 3.3V enable BR34E02FVT-WE2 to operate in different conditions with different supply voltages. Multiple temperature ranges can also be configured depending on the application requirements. Its maximum operating temperature can reach up to 105℃ , enabling it to work in challenging environments.

3. Industrial, IoT and Other Embedded Application Fields

The BR34E02FVT-WE2 can also be used in Industrial, IoT and other general embedded applications requiring low power usage and high performance. It is also suitable for applications such as high temperature monitoring systems and smart home appliances.

The power saving features such as auto-refresh and autopower down can reduce the power consumption and thus extend the usage time of the device. The auto-calibration and wide temperature range make it suitable for different applications and conditions.

4. Working Principle of BR34E02FVT-WE2

BR34E02FVT-WE2 operates with low voltage and uses a bank select concept to switch from one memory bank to another. This means that the chip only needs to be powered when a specific bank is being accessed. This reduces the amount of power required for accessing the memory.

The structure of the device comprises an array of memory cells that can be read and written using the command interface and a control register file to store configuration information. The control register file consists of four registers that control the data bus, write enable and read enable lines, and address and data transfer modes.

The data bus is used to transfer data between the memory and the host. The WRITE ENABLE and READ ENABLE lines are used by the host to initiate write and read cycles. The ADDRESS mode register is used to configure the mapping of virtual address to physical address in the memory. The DATA TRANSFER MODE register is used to indicate data transfer mode such as word, page or burst. These four registers can also be used to configure the operating frequency and address mapping.

The internally generated timing parameters are provided on the internal register interface. The timing parameters provide the necessary information to synchronize the memory banks so that they operate in parallel. This allows the device to access multiple memory banks in a single clock cycle.

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