BSC750N10NDGATMA1

Series:	OptiMOS™
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	3.2A
Rds On (Max) @ Id, Vgs:	75 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:	4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs:	11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	720pF @ 50V
Power - Max:	26W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerVDFN
Supplier Device Package:	PG-TDSON-8 Dual
Base Part Number:	BSC750N10

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BSC750N10NDGATMA1BSC750N10NDGATMA1 is a compact, industry-standard N-Channel MOSFET array. It is based on the ultra-fast IGBT technology (Insulated Gate Bipolar Transistor) which is the best choice for high speed switching operation. This low on-state resistance MOSFET array comes with advanced design and processing which provides excellent performance and reliability. This product is ideal for high current applications that require high speed switching. It is suitable for switching power supplies, adjustable motor drives, DC motor controllers, and high frequency conversion power supplies among other applications. The BSC750N10NDGATMA1 is rated to provide up to 60 mOhm resistance in on-state operation and a typical gate threshold voltage of 4V. This makes it capable of delivering high current at very fast switching speeds. The BSC750N10NDGATMA1 offers two separate channels to enhance flexibility in the design of circuits and applications. The forward channel can be used to provide bipolar outputs where two opposite control inputs are used for gate control. The complementary output option provides the ability to provide full power output. It can also be used for providing dual Hi/Lo outputs or in mixed applications, With the main benefit of mix applications being a reduced cost of components. The BSC750N10NDGATMA1 provides good efficient operation and improved circuit performance. It has low gate charge and low gate resistance which results in low switching losses and improved system efficiency. It also has low leakage current and is thermally protected.In addition, this product has an integrated protection circuit that prevents over-current and overvoltage conditions. It also offers good EMI (electromagnetic interference) protection. The BSC750N10NDGATMA1 has a wide operating temperature range of -40°C to 150°C and is suitable for use in many industrial and commercial applications. In summary, the BSC750N10NDGATMA1 is a high performance, low on-state resistance MOSFET array that offers excellent performance and reliability. It is ideal for high current applications where high speed switching and fault protection are required. It offers two separate channels, low gate charge and low gate resistance, low leakage current, and EMI protection. It is suitable for use in many industrial and commercial applications and provides good efficiency and improved circuit performance.

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