BSM080D12P2C008

The BSM080D12P2C008 is a power MOSFET array consisting of eight N- and P-channel MOSFETs on a single chip. This device is designed to minimize parasitics and provide guaranteed switching performance for both the N- and P-channel MOSFETs. It can be used in a variety of applications such as DC-DC converters, motor control, power switches, and plasma display and monitor applications.

The BSM080D12P2C008 has an integrated N-channel MOSFET and P-channel MOSFET. The N-channel MOSFET has the following device parameters: R_DS(on) = 0.016Ω, V_GS(th) = 2.5V and a maximum drain current rating of 11A. The P-channel MOSFET has the following device parameters: R_DS(on) = 0.056Ω, V_GS(th) = -4.5V and a maximum drain current of 8A. This device is also shown in reverse-L-shape packages for applications requiring an integrated high-current N-channel and P-channel MOSFET.

The BSM080D12P2C008 can be used in a variety of applications. In power supply applications, it can be used to control current in switching converters and DC-DC converters. In motor control applications, it can be used to drive power levels up to 15A, even when peak surges of current are encountered. In power switch applications, it can be used as a control element in high-side power switching circuits. In plasma displays, it can be used as a control element to drive the plasma discharge necessary to produce an image.

The primary working principle of the BSM080D12P2C008 is based on the principles of electric fields. Whenever a gate voltage (V_g) is applied to the gate of the MOSFET, an electric field is created between the source and the drain. This electric field affects the current passing through the source-drain channel and further influences the voltage drop across the channel (V_ds). When the gate voltage is increased, the electric field strengthens, causing the current to increase and the voltage to drop. Conversely, when the gate voltage is decreased, the electric field weakens and thus the current decreases as well as the voltage drop.

The BSM080D12P2C008 device is a high-current, dual-MOSFET array used in a variety of applications. It utilizes electric fields between the source and drain to control the current passing through the source-drain channel. This device provides guaranteed switching performance for both N- and P-channel MOSFETs, making it suitable for a range of high-power applications such as DC-DC converters, motor control, power switches, and plasma display and monitor applications.