
Allicdata Part #: | BSO150N03MDGXUMA1TR-ND |
Manufacturer Part#: |
BSO150N03MDGXUMA1 |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 30V 8A 8DSO |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 8A 1.4W Surfac... |
DataSheet: | ![]() |
Quantity: | 5000 |
2500 +: | $ 0.30473 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Base Part Number: | BSO150N03 |
Supplier Device Package: | PG-DSO-8 |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.4W |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 9.3A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BSO150N03MDGXUMA1 Application Field and Working Principle Overview
BSO150N03MDGXUMA1 is a type of high-power transistor array, commonly referred to as an insulation gate field effect transistor array (IGFET array). It is primarily used in applications requiring high power switching and signal amplification, as well as being an ideal substitute for high power vacuum tube based applications. The BSO150N03MDGXUMA1 can be used in a wide range of applications, such as power switching circuits, signal amplifiers, audio power amps and any other application requiring a high-power array.
The Working Principle of BSO150N03MDGXUMA1
BSO150N03MDGXUMA1 is a four-terminal array, which means that it has four electrical contacts that allow it to be connected in various configurations. The four terminals are named alphbetically. The gate terminal G, is a voltage input that controls the channel resistance between the source and drain terminals. The source, S, is the negative terminal, and the drain, D, is the positive terminal. The fourth terminal is not shown in the symbol, and is called the substrate or body. This serves as a connection for providing a charge to the transistor gate.
BSO150N03MDGXUMA1 is based on the enhancement mode MOSFET (metal oxide semiconductor FET) technology. It is a type of field effect transistor, where the MOSFETs are arranged into a four-terminal array, with the gate terminal connected to all of the sources. When a voltage is applied to the gate, it creates an electrostatic force that attracts electrons from the source and creates a conducting channel, between the source and drain, thus allowing current to flow. The current flow is then controlled by the gate voltage.
The BSO150N03MDGXUMA1 array is capable of operating with voltages up to 150V and a current rating up to 20A. The on-state resistance of the array is typically less than 0.02 ohms. The array also has a low thermal resistance, which allows it to handle large amounts of power, making it suitable for use in high power audio amplifiers. In addition, the array is highly compatible with other integrated circuits, making it an ideal choice for a wide range of applications.
Applications of BSO150N03MDGXUMA1
The BSO150N03MDGXUMA1 array is suitable for use in a wide range of applications, from high power switching circuits and signal amplifiers to audio power amps and any other applications where high power is required. It can also be used for the control of motors, air conditioners, lighting systems, and more. It is highly compatible with other integrated circuits and is ideal for systems requiring a high-power array. The array offers excellent performance, making it a popular choice for power switching, signal amplifier, and audio power amp applications.
The array is also used in the control of lighting systems. It is able to control the light intensity of a particular light, and can be used to create different moods. This is achieved by varying the amount of current that is fed to the array, thus changing the intensity of the lighting. This makes it perfect for creating different lighting effects in a particular space.
Conclusion
BSO150N03MDGXUMA1 is a powerful four-terminal array, which is highly compatible with other integrated circuits and is ideal for use in applications requiring high power switching and signal amplification. It can also be used for the control of motors, air conditioners, lighting systems, and more. This array is capable of operating with voltages up to 150V and a current rating up to 20A, and has a low thermal resistance, making it suitable for high power audio amplifiers. Ultimately, it is the perfect choice for a wide range of applications, owing to its superior performance and reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BSO150N03 | Infineon Tec... | -- | 1000 | MOSFET 2N-CH 30V 7.6A 8DS... |
BSO130P03SNTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 30V 9.2A 8DSO... |
BSO130P03SHXUMA1 | Infineon Tec... | 0.39 $ | 1000 | MOSFET P-CH 30V 9.2A 8DSO... |
BSO130N03MSGXUMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 9A 8DSON-... |
BSO110N03MSGXUMA1 | Infineon Tec... | 0.26 $ | 1000 | MOSFET N-CH 30V 10A 8DSON... |
BSO150N03MDGXUMA1 | Infineon Tec... | 0.34 $ | 5000 | MOSFET 2N-CH 30V 8A 8DSOM... |
BSO104N03S | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 10A 8DSON... |
BSO119N03S | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 9A 8DSON-... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

MOSFET 2N-CH 56LFPAKMosfet Array

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...
