BSO303PHXUMA1 Allicdata Electronics
Allicdata Part #:

BSO303PHXUMA1TR-ND

Manufacturer Part#:

BSO303PHXUMA1

Price: $ 0.55
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2P-CH 30V 7A 8DSO
More Detail: Mosfet Array 2 P-Channel (Dual) 30V 7A 2W Surface ...
DataSheet: BSO303PHXUMA1 datasheetBSO303PHXUMA1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.49559
Stock 1000Can Ship Immediately
$ 0.55
Specifications
Series: OptiMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8
Description

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The BSO303PHXUMA1 is an array of MOSFETs (metal oxide semiconductor field effect transistors), and is generally used as an efficient amplifier in either analog or digital forms. This series of MOSFETs allows for an integrated circuit (IC) to control and manipulate signals with much greater speed and efficiency than a traditional transistor and can be used in a wide variety of applications such as power and signal management, signal switching, audio amplification, and analog to digital conversion.

The BSO303PHXUMA1 is made up of two N-channel MOSFETs that can be used as either independent switches or in a parallel configuration. The two MOSFETs have the same gate-to-source voltage, but can be connected in either a non-inverting or inverting configuration depending on the user’s design requirements. This series of MOSFETs also has a built-in drain-to-source resistance of 18 ohms. This low resistance allows for an extremely fast switching time of less than 2 microseconds, ensuring that signals propagate quickly and accurately.

One major advantage of the BSO303PHXUMA1 array is its ability to easily integrate into existing systems. When used as a switch array, this MOSFET array can be used to drive a variety of signals such as digital logic signals, analog signals, and even detection signals. The ability to integrate this device into existing systems makes it an ideal solution for a wide range of applications. Additionally, the device’s integrated protection features protect against short-circuits, over-voltages, and excessive temperature.

The major disadvantage of the BSO303PHXUMA1 is its relatively high cost when compared to other MOSFETs. Additionally, the device’s small size requires an additional amplifier to amplify weak signals. Finally, due to the device’s small size and the amount of heat that it dissipates, it must be placed in an area with good thermal dissipation.

The BSO303PHXUMA1 is capable of handling high frequencies and can be used in a variety of applications such as signal switching, signal management, audio amplification, and analog to digital conversion. Its low drain-to-source resistance and small size allow this device to be integrated into existing systems with ease. While it may require additional components such as an amplifier to operate, its ability to handle large signals with high precision and speed make it an ideal solution for many applications.

The specific data is subject to PDF, and the above content is for reference

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