BST16,115 Allicdata Electronics
Allicdata Part #:

BST16,115-ND

Manufacturer Part#:

BST16,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS PNP 300V 0.2A SOT89
More Detail: Bipolar (BJT) Transistor PNP 300V 200mA 15MHz 1.3W...
DataSheet: BST16,115 datasheetBST16,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Power - Max: 1.3W
Frequency - Transition: 15MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Base Part Number: BST16
Description

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Introduction

The BST16,115 is a type of N-channel Enhancement-mode insulated gate field-effect transistor (IGFET), also known as an N-Channel MOSFET, that is a specific type of transistor that has a widely used in modern electronics and electrical applications. This type of transistor is widely applied to power conversion, switching, and controlling applications.

Application Field

The BST16,115 has versatile application fields and finds uses in amplifiers, battery applications, DC-DC converters, DC motors, and various other applications where power is needed. The Ic(max) of the device is 18 A and the VDSS rating is 16 V, making it suitable for moderately high-power applications. It is also often used for power management in audio systems, and can be found in a variety of consumer and industrial devices. As it is an N-channel MOSFET, the output of the device can be accurately controlled with a small control voltage, making it perfect for voltage switching applications in electronics where precise control is needed.

Working Principle

Essentially, the BST16,115 is a type of switch. When the voltage applied to the gate is low, the switch is open and the device does not conduct current. When the voltage is increased, the switch closes and the device starts to conduct current and allow larger current to flow. This relationship between voltage and current is known as the transfer characteristic curve and it is used to determine the device’s performance. The saturation voltage, or Vds(sat), of the BST16,115 is 2.5 V, which means that if the voltage across the device is higher than 2.5 V, it will reach saturation, or maximum current, and the transistor won’t be able to conduct any more current. This can be useful when controlling the level of current in an electronic application.

Conclusion

The BST16,115 is a versatile N-channel MOSFET, commonly used in various electronic and power applications. It has a Ic(max) of 18 A and a VDSS rating of 16 V, making it suitable for many high power devices. Its precise voltage-current transfer characteristic curve can be used to accurately control the current in applications where precise control is needed. All in all, the BST16,115 is a useful device with myriad application fields.

The specific data is subject to PDF, and the above content is for reference

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