BST39,115

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	350V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 4mA, 50mA
Current - Collector Cutoff (Max):	20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 20mA, 10V
Power - Max:	1.3W
Frequency - Transition:	70MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89-3
Base Part Number:	BST39

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Introduction

The BST39,115 is a single bipolar junction transistor (BJT) that is widely used in a variety of applications. It has been developed over the years to provide improved performance characteristics over previous generations such as lower noise, faster switching speeds and higher gain. Due to its unique characteristics, the BST39,115 is particularly useful for applications that require exact device parameters such as radio frequency (RF) circuits and high-temperature applications. In this article, we will look at the applications for the BST39, 115, its working principles and some of its key features.

Applications for BST39,115

The BST39,115 is well-suited for a variety of applications. Due to its unique characteristics, the device is particularly useful for RF circuits. It has very low noise and fast switching speeds, making it an ideal choice for RF applications such as wireless communication systems. In addition, the BST39,115’s high gain makes it suitable for amplifier circuits. It can also be used in fast switching circuits as well as high-temperature applications.

Working Principle of BST39,115

The BST39,115 is a single BJT device. A BJT is a combination of two PN junctions, the base-emitter junction and the base-collector junction, which form a sandwich of semiconductor material. When a voltage is applied to the base-emitter junction, a current flows through the device. This current then flows into the base-collector junction, depending on the voltage of the base-emitter junction. The current flowing through the base-collector junction is called the collector current. This current is controlled by the base-emitter voltage and is modulated by the BJT’s geometry. As the base-emitter voltage increases, the collector current increases. This provides the BST39,115 with its unique characteristics such as low noise and fast switching speeds.

Key Features of BST39,115

The BST39,115 has several key features that make it a popular choice for many types of applications. Firstly, it has a high gain, which makes it well-suited for amplifier circuits. Secondly, it has very low noise, making it an ideal choice for RF circuits. Thirdly, the device has fast switching speeds which make it suitable for high-speed switching circuits. Finally, the BST39, 115 is highly reliable and has a long service life, making it ideal for high-temperature applications.

Conclusion

The BST39,115 is a single bipolar junction transistor (BJT) with a wide range of applications. It has a high gain, low noise, fast switching speeds, and a long service life, making it a great choice for many types of applications. It is particularly useful for RF circuits and high-temperature applications.

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