| Allicdata Part #: | BST39TR-ND |
| Manufacturer Part#: |
BST39TA |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | TRANS NPN 350V 0.5A SOT-89 |
| More Detail: | Bipolar (BJT) Transistor NPN 350V 500mA 70MHz 1W S... |
| DataSheet: | BST39TA Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 350V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max): | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 20mA, 10V |
| Power - Max: | 1W |
| Frequency - Transition: | 70MHz |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-243AA |
| Supplier Device Package: | SOT-89-3 |
| Base Part Number: | BST39 |
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BST39TA is a single-transistor device that is used in a variety of electronics applications, ranging from electronic amplifiers to optoelectronics. This type of transistor is available in two distinct packages and features a variety of features that make it suitable for a wide range of applications.
The device has an emitter-base-collector structure and features a collector-base-emitter (CBE) structure in its PNP version with areas devoted to the emitter and the collector. This scientific structure ensures higher power output, while at the same time reducing power consumption. The device also offers X-design to reduce the collector-emitter voltage (VCE) drop, as well as full-lead packaging for increased power output.
The BST39TA device offers an excellent intermodulation distortion (IMD) performance at a single-transistor level, along with outstanding spectral purity and excellent reverse transfer characteristics. As a result of these performance factors, the device is suitable for use in high frequency multiplexing, signal conditioning, and oscillators applications. BST39TA also has the ability to support high power operation, making it well suited for use in power amplifiers. Finally, the high-performance features of the device are accompanied by an easy to use interface, which makes it suitable for a wide range of applications.
The working principle of BST39TA begins when the device is powered up. The collector current is initially limited by the base-emitter (B-E) junction, and the collector-emitter voltage (VCE) is set. Then the B-E voltage drops, causing the collector current to increase. The collector current increases until the maximum current is reached and the collector-base voltage (VCB) is used to limit the current.
The output voltage is then given by the interrelationship between the collector current and the collector-emitter voltage. The output voltage is usually related to the energy supplied by the external source, which is used to power the device. This energy can be modulated in order to generate the desired output signal.
In addition to its working principle, the BST39TA device offers a variety of features that make it suitable for a wide range of applications. Its high power output, low power consumption, and excellent intermodulation distortion performance make it an attractive choice for applications in multiplexing, signal conditioning, and oscillators. Finally, it is easy to use and offers full lead packaging for increased power output, making it suitable for applications in high power operation.
The specific data is subject to PDF, and the above content is for reference
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BST39TA Datasheet/PDF