BT151S-650R,118 Allicdata Electronics

BT151S-650R,118 Discrete Semiconductor Products

Allicdata Part #:

1740-1071-2-ND

Manufacturer Part#:

BT151S-650R,118

Price: $ 0.20
Product Category:

Discrete Semiconductor Products

Manufacturer: WeEn Semiconductors
Short Description: THYRISTOR 650V 12A DPAK
More Detail: SCR 650V 12A Standard Recovery Surface Mount DPAK
DataSheet: BT151S-650R,118 datasheetBT151S-650R,118 Datasheet/PDF
Quantity: 12500
2500 +: $ 0.17357
5000 +: $ 0.16160
12500 +: $ 0.15561
25000 +: $ 0.14963
Stock 12500Can Ship Immediately
$ 0.2
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Off State: 650V
Voltage - Gate Trigger (Vgt) (Max): 1.5V
Current - Gate Trigger (Igt) (Max): 15mA
Voltage - On State (Vtm) (Max): 1.75V
Current - On State (It (AV)) (Max): 7.5A
Current - On State (It (RMS)) (Max): 12A
Current - Hold (Ih) (Max): 20mA
Current - Off State (Max): 500µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 132A
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: BT151
Description

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Thyristors or silicon controlled rectifiers (SCRs) are four-layer diodes that are used as switches in power electronics. The BT151S-650R is a type of thyristor capable of switching current in the range of 650 volts DC and is capable of handling 118 amperes of current. Its maximum blocking voltage, meaning the voltage between the Anode and Cathode at which it can no longer remain in its “off” state, is 650 V DC.

The BT151S-650R is commonly used in many industrial applications, ranging from power systems and circuit protection to ignition systems in vehicles. The device can be controlled either directly using a voltage source or indirectly using a zero-crossing switch or pulse-width modulation (PWM). It is important to note that the device only switches to its “on” state when the gate is activated and the anode-to-cathode voltage reaches the minimum “holding” voltage; this means that the device must be triggered and sustained for it to remain in its “on” state.

When considering the operation of the BT151S-650R, it is important to understand that it consists of four layers: the anode side, the cathode side, and the two junction layers. When the device is in its “off” state, a high resistance exists between the anode and cathode layers, causing no current to flow. However, when triggered, the two junction layers create a low resistor path between the anode and cathode layers, allowing current to flow.

The BT151S-650R offers several advantages over traditional silicon diodes, one of which is that it is capable of maintaining a low voltage drop across its gate (the front gate layer) when switched to its on-state, allowing for efficient operation. Additionally, the thyristor\'s ability to remain in its “on” state for a long period of time without needing to be triggered again makes it ideal for use in applications where continuous operation is required, such as in power supplies or motor control systems.

In conclusion, the BT151S-650R is a type of thyristor designed for high-voltage applications in industrial and power electronics systems. It is capable of handling 118 amperes of current and can be controlled with either a direct voltage source or indirectly with a zero-crossing switch or PWM. It has several advantages over traditional silicon rectifiers, including the fact that it can maintain a low voltage drop across its gate when switched to its “on” state and that it can remain in its “on” state for a long period of time without needing to be triggered again.

The specific data is subject to PDF, and the above content is for reference

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