Allicdata Part #: | BTS6133DNT-ND |
Manufacturer Part#: |
BTS6133DNT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC HIGH SIDE PWR SWITCH DPAK-5 |
More Detail: | N/A |
DataSheet: | BTS6133DNT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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The BTS6133DNT is a logic level gate driver IC for power supply circuits. It is designed to drive N-Channel power MOSFETs and N-Channel insulated-gate bipolar transistors (IGBTs) from a single supply operating from 4.5V to 20V. It has a low-side output voltage of -3.3V needed to drive the N-Channel MOSFETs in high side configurations and low-side N-Channel MOSFETs. The device is galvanically isolated within a single package using an integrated 500mΩ dielectric isolation barrier.
Application field of BTS6133DNT
The BTS6133DNT is suitable for DC-DC converters, AC-DC converters, power supplies, electronic power control, LED lighting, and other power management applications. It can be used to drive N-Channel MOSFETs and N-Channel IGBTs in DC motor controls, high-power motor drives, consumer electronics and automotive applications.
Working principle of BTS6133DNT
The BTS6133DNT consists of an integrated driver circuit and two logic inputs. It uses an internal high-speed oscillator and a power driver transistor to generate sufficient gate drive current. It provides a fast turn-on rise time while providing a safe turn-off time to limit the conduction losses of the power FETs in the circuit. The BTS6133DNT also provides protection against overvoltage and overcurrent. This protection is provided by an integrated voltage regulator and current trip circuit. The device has adjustable dead time for shoot-through protection. The device is designed with various features like power supply monitoring, overvoltage protection, short circuit protection, over current protection and dead time regulation.
The BTS6133DNT is a very useful IC for a variety of power management applications. It is designed to drive N-Channel MOSFETs and N-Channel IGBTs in high-power applications. It provides a high peak output current and fast turn-on and turn-off times to ensure fast and efficient operation. The device also offers various protections like overvoltage and overcurrent protection, and shoot-through protection. The device is easily implemented into many types of power supply circuits that require the use of N-Channel MOSFETs and N-Channel IGBTs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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