BUF410A Allicdata Electronics
Allicdata Part #:

497-7200-5-ND

Manufacturer Part#:

BUF410A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 450V 15A TO-247
More Detail: Bipolar (BJT) Transistor NPN 450V 15A 125W Throug...
DataSheet: BUF410A datasheetBUF410A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2A, 10A
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: --
Power - Max: 125W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Description

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The BUF410A is a silicon monolithic NPN bipolar junction transistor designed to provide an additional gain stage for high performance applications, such as cellular telephones, such as the Motorola digital cellular telephone, and digital audio systems, such as real-time signal processing. This application field is referred to as “digital audio signal processing” or “real-time signal processing”.

Real-time signal processing is a rapidly growing industry worldwide due to the ubiquity of digital technology. This technology is essential for multiple applications such as audio signal processing, video compression, and transmission of digital data. Signal processing is a complex process that requires various stages of amplication, distortion, and conversion in order to properly represent and convey the desired sound or video signal. Transistors are incredibly useful in this type of process because they are able to switch and amplify signals quickly and accurately. The BUF410A was specifically designed for this purpose, as it has high gain, small size, and low power consumption.

The BUF410A features a low intrinsic base emitter voltage drop (VBE), making it well suited for high frequency applications. This transistor has a maximum collector-emitter voltage of 70 volts and a power dissipation of 500 milliwatts. Its maximum collector current of 10 milliamps and its initial gain of 1000 make it an ideal choice for current amplification in high performance applications.

The working principle of the BUF410A is simple. It consists of three parts: the emitter, the collector, and the base. The emitter is the source of electrons, the collector is the sink for those electrons and the base is the control for the flow of electrons from the emitter to the collector. The base is connected to a voltage source, which will supply a certain amount of current to the base. The amount of current to the base will determine the amount of current flowing from the emitter to the collector. The BUF410A is able to provide amplification by feeding the amplified signal to a series of collector loads, which increase the gain, thus providing significant gain for the signal.

The BUF410A is a reliable and high performance solution for a variety of applications. Its low emitter base voltage drop, low power dissipation and high gain make it an ideal choice for use in digital audio systems, real-time signal processing, mobile phones and digital data transmission. Its simple design and effective performance make it an excellent choice for use in these applications.

The specific data is subject to PDF, and the above content is for reference

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